S. Piotrowicz, B. Mallet-Guy, E. Chartier, J. Jacquet, O. Jardel, D. Lancereau, G. Le Coustre, E. Morvan, R. Aubry, C. Dua, M. Oualli, M. Richard, N. Sarazin, M. diForte-Poisson, J. Delaire, Y. Mancuso, S. Delage
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Broadband AlGaN/GaN high power amplifiers, robust LNAs, and power switches in L-Band
GaN-based HEMT's have demonstrated better power-frequency performances than other devices using smaller band gap semiconductor materials. Studies have already been realized to evaluate the impact of GaN-based devices at the system level. In this paper, we present the design and the realization of broadband power amplifiers, low noise amplifiers and power switches for future generation of TR-RX modules. These functions are based on the AlGaN/GaN HEMT technology developed at Alcatel-Thales III-V Lab.
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