S-band discrete and MMIC GaN power amplifiers

Abstract

The use of GaN devices for microwave power amplifiers begins to be a reality in Europe. This paper describes two S-band (2.7–3.3 GHz) high power amplifier (HPA) designs; one discrete 100 W output stage and one 10 W MMIC power amplifier. The discrete power amplifier is designed using two GaN power bars with a total gate width of 19.2 mm. The GaN power bars have been developed by Selex-SI, within the european co-project Korrigan. The MMIC power amplifier was designed using a 0.25 µm GaN HEMT process supplied and processed by Chalmers.