基于GaAs 0.25µm Power pHEMT技术开发的宽带高线性和高隔离混频器MMIC

2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI:10.23919/eumc.2009.5296270

M. Dinari, V. Serru, M. Camiade, C. Teyssandier, D. Baglieri, E. Durand, B. Mallet-Guy, J. Plaze

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引用次数: 1

摘要

在雷达和战争应用的框架下，采用UMS GaAs 0.25µm功率pHEMT技术开发了单片微波集成电路(MMIC)混频器。本文档中介绍的混频器同时具有宽频带、高隔离度和高线性度。在6-18GHz频段，混频器的隔离效果为25dB，输入射频压缩点高于16dBm，输入IP3为25dBm。据我们所知，这些性能是在完全集成的GaAs MMIC中报道的最高性能。

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Wide band high linearity and high isolation mixer MMIC developed on GaAs 0.25µm Power pHEMT technology

In the frame of radar and warfare applications, a Monolithic Microwave Integrated Circuit (MMIC) Mixer has been developed using a UMS GaAs 0.25 µm Power pHEMT Technology. The mixer presented in this document exhibits at the same time wide frequency band, high isolation and high linearity. In the 6–18GHz frequency band, the mixer demonstrates 25dB for the isolations, an input RF compression point higher than 16dBm and an Input IP3 of 25dBm. To our knowledge these performances are among the highest reported on a fully integrated GaAs MMIC.

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2009 European Microwave Integrated Circuits Conference (EuMIC)

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