通过控制栅源电压波形来提高GaN功率hemt的效率

2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI:10.23919/eumc.2009.5296334

A. Ramadan, A. Martin, T. Reveyrand, J. Nebus, P. Bouysse, L. Lapierre, J. Villemazet, S. Forestier

{"title":"通过控制栅源电压波形来提高GaN功率hemt的效率","authors":"A. Ramadan, A. Martin, T. Reveyrand, J. Nebus, P. Bouysse, L. Lapierre, J. Villemazet, S. Forestier","doi":"10.23919/eumc.2009.5296334","DOIUrl":null,"url":null,"abstract":"This paper presents a technique to improve the power added efficiency (PAE) of GaN power amplifiers by an appropriate shaping of the gate source voltage waveform. The proposed technique is based on second harmonic injection at the transistor input. It is applied here to a 15W GaN HEMT die from Cree that has been characterized using an harmonic load pull test bench at L-band.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"Efficiency enhancement of GaN power HEMTs by controlling gate-source voltage waveform shape\",\"authors\":\"A. Ramadan, A. Martin, T. Reveyrand, J. Nebus, P. Bouysse, L. Lapierre, J. Villemazet, S. Forestier\",\"doi\":\"10.23919/eumc.2009.5296334\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a technique to improve the power added efficiency (PAE) of GaN power amplifiers by an appropriate shaping of the gate source voltage waveform. The proposed technique is based on second harmonic injection at the transistor input. It is applied here to a 15W GaN HEMT die from Cree that has been characterized using an harmonic load pull test bench at L-band.\",\"PeriodicalId\":148226,\"journal\":{\"name\":\"2009 European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"83 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/eumc.2009.5296334\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/eumc.2009.5296334","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 20

摘要

本文提出了一种通过对栅极源电压波形进行适当整形来提高氮化镓功率放大器功率附加效率(PAE)的方法。该技术基于晶体管输入端的二次谐波注入。本文将其应用于Cree公司的15W GaN HEMT芯片，该芯片已使用l波段谐波负载拉测试台进行了表征。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Efficiency enhancement of GaN power HEMTs by controlling gate-source voltage waveform shape

This paper presents a technique to improve the power added efficiency (PAE) of GaN power amplifiers by an appropriate shaping of the gate source voltage waveform. The proposed technique is based on second harmonic injection at the transistor input. It is applied here to a 15W GaN HEMT die from Cree that has been characterized using an harmonic load pull test bench at L-band.

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2009 European Microwave Integrated Circuits Conference (EuMIC)

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