{"title":"40至85GHz功率放大器mmic采用基于光学光刻的低成本GaAs PHEMT工艺","authors":"K. Fujii, J. Stanback, H. Morkner","doi":"10.23919/eumc.2009.5295913","DOIUrl":null,"url":null,"abstract":"An optical photo lithography based 0.15µm GaAs PHEMT process and 2mil-substrate technology that enables high production throughput and low cost is described. The developed process achieved Imax=575mA/mm, BVgd=14V, and 753mW/mm of output power density at P-1 condition at 18GHz. Design and test results for balanced and single-ended power amplifiers (PA) for 40 to 85GHz applications are described as process capability verification. Balanced PA MMICs shows 18dB of small-signal gain and 17dBm of output power up to 85GHz frequencies. MMIC test results verified the process capability to manufacture MMIC devices for applications up to 90GHz.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"40 to 85GHz power amplifier MMICs using an optical lithography based low cost GaAs PHEMT process\",\"authors\":\"K. Fujii, J. Stanback, H. Morkner\",\"doi\":\"10.23919/eumc.2009.5295913\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An optical photo lithography based 0.15µm GaAs PHEMT process and 2mil-substrate technology that enables high production throughput and low cost is described. The developed process achieved Imax=575mA/mm, BVgd=14V, and 753mW/mm of output power density at P-1 condition at 18GHz. Design and test results for balanced and single-ended power amplifiers (PA) for 40 to 85GHz applications are described as process capability verification. Balanced PA MMICs shows 18dB of small-signal gain and 17dBm of output power up to 85GHz frequencies. MMIC test results verified the process capability to manufacture MMIC devices for applications up to 90GHz.\",\"PeriodicalId\":148226,\"journal\":{\"name\":\"2009 European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"97 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/eumc.2009.5295913\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/eumc.2009.5295913","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
摘要
介绍了一种基于0.15 μ m GaAs PHEMT工艺和2mil衬底技术的光学光刻技术，该技术可实现高产量和低成本。所开发的工艺在18GHz的P-1条件下实现了输出功率密度Imax=575mA/mm, BVgd=14V, 753mW/mm。用于40至85GHz应用的平衡式和单端功率放大器(PA)的设计和测试结果被描述为过程能力验证。平衡PA mmic在85GHz频率下的小信号增益为18dB，输出功率为17dBm。MMIC测试结果验证了制造高达90GHz应用的MMIC器件的工艺能力。
40 to 85GHz power amplifier MMICs using an optical lithography based low cost GaAs PHEMT process
An optical photo lithography based 0.15µm GaAs PHEMT process and 2mil-substrate technology that enables high production throughput and low cost is described. The developed process achieved Imax=575mA/mm, BVgd=14V, and 753mW/mm of output power density at P-1 condition at 18GHz. Design and test results for balanced and single-ended power amplifiers (PA) for 40 to 85GHz applications are described as process capability verification. Balanced PA MMICs shows 18dB of small-signal gain and 17dBm of output power up to 85GHz frequencies. MMIC test results verified the process capability to manufacture MMIC devices for applications up to 90GHz.
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