G. van der Bent, T. de Boer, R. van Dijk, M. W. van der Graaf, A. P. de Hek, F. V. van Vliet
{"title":"X-band phase-shifting dual-output balanced amplifier MMIC","authors":"G. van der Bent, T. de Boer, R. van Dijk, M. W. van der Graaf, A. P. de Hek, F. V. van Vliet","doi":"10.23919/eumc.2009.5296029","DOIUrl":null,"url":null,"abstract":"An X-band MMIC containing two 6 bit phase shifters and 1 Watt amplifiers in balanced configuration has been developed. The device has two output ports. The balance between the output powers of the two ports can be controlled via de phase shifter settings. This MMIC could be applied in systems where variable linear polarisation control is required, such as polarimetric radar or satellite communication systems. The MMIC has been developed in the 6-inch 0.5 µm power GaAs pHEMT process (PP50–11) of WIN Semiconductors.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/eumc.2009.5296029","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
An X-band MMIC containing two 6 bit phase shifters and 1 Watt amplifiers in balanced configuration has been developed. The device has two output ports. The balance between the output powers of the two ports can be controlled via de phase shifter settings. This MMIC could be applied in systems where variable linear polarisation control is required, such as polarimetric radar or satellite communication systems. The MMIC has been developed in the 6-inch 0.5 µm power GaAs pHEMT process (PP50–11) of WIN Semiconductors.