40 to 85GHz power amplifier MMICs using an optical lithography based low cost GaAs PHEMT process

Abstract

An optical photo lithography based 0.15µm GaAs PHEMT process and 2mil-substrate technology that enables high production throughput and low cost is described. The developed process achieved Imax=575mA/mm, BVgd=14V, and 753mW/mm of output power density at P-1 condition at 18GHz. Design and test results for balanced and single-ended power amplifiers (PA) for 40 to 85GHz applications are described as process capability verification. Balanced PA MMICs shows 18dB of small-signal gain and 17dBm of output power up to 85GHz frequencies. MMIC test results verified the process capability to manufacture MMIC devices for applications up to 90GHz.