宽带6-18 GHz GaN阻性混频器的建模与设计

2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI:10.1109/EUMC.2009.5295933

V. Di Giacomo, N. Thouvenin, C. Gaquière, A. Santarelli, F. Filicori

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引用次数: 13

摘要

设计并仿真了一种宽带混合AlGaN/GaN阻性混频器。冷场效应管混频器基于单端电路拓扑中的2*100*0.25µm2 AlGaN/GaN HEMT。在小信号和大信号条件下，提取并验证了特定应用的经验晶体管模型，以便进行混频器设计和仿真。该混频器具有6 GHz的中频带宽，在6至18 GHz的每个RF和LO频率选择中，转换损耗≪16 dB。

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Modelling and design of a wideband 6–18 GHz GaN Resistive Mixer

A wideband hybrid AlGaN/GaN Resistive Mixer has been designed and simulated. The cold-FET mixer is based on a 2*100*0.25 µm2 AlGaN/GaN HEMT in a single-ended circuit topology. An application-specific empirical transistor model has been extracted and validated in small- and large-signal conditions, in order to carry out the mixer design and simulations. This mixer presents an IF bandwidth of 6 GHz with a conversion loss ≪ 16 dB for each RF and LO frequency choice from 6 up to 18 GHz.

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来源期刊

2009 European Microwave Integrated Circuits Conference (EuMIC)

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