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2009 European Microwave Integrated Circuits Conference (EuMIC)最新文献

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Phase-locked broadband GaAs HBT VCO module for millimeter-wave astronomical local oscillators 用于毫米波天文本振的锁相宽带GaAs HBT压控振荡器模块
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296586
Y. Kuo, Yuh-Jing Hwang, Chau-Ching Chiong, R. Weng, Ming-Tang Chen
{"title":"Phase-locked broadband GaAs HBT VCO module for millimeter-wave astronomical local oscillators","authors":"Y. Kuo, Yuh-Jing Hwang, Chau-Ching Chiong, R. Weng, Ming-Tang Chen","doi":"10.23919/eumc.2009.5296586","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296586","url":null,"abstract":"A phase-locked broadband GaAs HBT voltage controlled oscillator module is designed, fabricated and tested for the local oscillators in millimetre-wave astronomical heterodyne receivers. The configuration of the local oscillator module is based on the offset phase-locked loop scheme with frequency dividing circuit in the feedback path. Employing closed-loop operation, the system can produce carrier frequencies with negligible reference spur. This system achieves phase noise of −94 dBc/Hz at 1 MHz offset and −104 dBc/Hz at 2 MHz offset, no significant spur observed.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123247535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
GaN MMIC amplifiers for W-band transceivers 用于w波段收发器的GaN MMIC放大器
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5295964
S. Masuda, T. Ohki, K. Makiyama, M. Kanamura, N. Okamoto, H. Shigematsu, K. Imanishi, T. Kikkawa, K. Joshin, N. Hara
{"title":"GaN MMIC amplifiers for W-band transceivers","authors":"S. Masuda, T. Ohki, K. Makiyama, M. Kanamura, N. Okamoto, H. Shigematsu, K. Imanishi, T. Kikkawa, K. Joshin, N. Hara","doi":"10.23919/eumc.2009.5295964","DOIUrl":"https://doi.org/10.23919/eumc.2009.5295964","url":null,"abstract":"This paper presents W-band monolithic microwave integrated circuit (MMIC) amplifiers with grounded coplanar waveguide (GCPW) in 0.12µm GaN HEMT technology. A fabricated four-stage low-noise amplifier (LNA) exhibited a record gain of 23 dB at 76.5 GHz and a first reported noise figure (NF) of 3.8 dB at 80 GHz for any W-band GaN MMIC. Another MMIC power amplifier (PA) delivered an output power of 25.4 dBm at 76.5 GHz with continuous wave (CW) operation. To our knowledge, this is the first demonstration of GaN LNA as well as GaN MMICs with GCPW in the W-band. In addition, a practical design technique to prevent instability of the W-band MMIC is described.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122531846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 40
Harmonic load-pull technique using Volterra analysis 谐波负载-拉技术的Volterra分析
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296489
J. Aikio, M. Makitalo, T. Rahkonen
{"title":"Harmonic load-pull technique using Volterra analysis","authors":"J. Aikio, M. Makitalo, T. Rahkonen","doi":"10.23919/eumc.2009.5296489","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296489","url":null,"abstract":"In this paper a fast harmonic load pull simulation technique based on Volterra analysis is presented. First one nonlinear harmonic balance simulation is run to characterize the coefficients for the polynomial models of each nonlinear source. Then the fitted models are used in the direct Volterra method to calculate IM3L and IM3H within harmonic load pull analysis. As a result the simulation speed is increased significantly compared to HB. Using the proposed technique harmonic impedances are optimized to decrease distortion level but also to minimize bandwidth dependency and IMD asymmetry.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"347 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122851339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A complete 38 GHz transmit and receive chip set in low cost surface mount package 一个完整的38 GHz发射和接收芯片集在低成本表面贴装封装
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296321
H. Morkner, K. Fujii, Khantran Phan, Sushil Kumar
{"title":"A complete 38 GHz transmit and receive chip set in low cost surface mount package","authors":"H. Morkner, K. Fujii, Khantran Phan, Sushil Kumar","doi":"10.23919/eumc.2009.5296321","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296321","url":null,"abstract":"While most Point-to-Point radio systems migrate to SMT(Surface Mount Technology) over chip-and-wire, the 38GHz band has provided the largest challenge. This paper demonstrates a commercially viable complete SMT solution to receive LNA-down-converter and transmit Up-converter. VGA, Power Amp and Directional Power Detector. The receive chain provides 10dB conversion gain with 4.5dB NF. The transmit chain provides 26dB maximum total gain with 24dB gain control and 30dBm maximum power out at 1dB compression. The amplifiers are housed in 5×5mm packages while the detector uses a chip scale 1×0.5mm package. All cover the 37 to 42 GHz radio bands. This is the only known complete SMT Tx/Rx solution to be published or demonstrated.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117239553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A 5.8-GHz GaAs based HBT amplifier with novel RF ESD protection 一种具有新型射频ESD保护的5.8 ghz GaAs HBT放大器
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296381
Bo-Jr Huang, Kun-You Lin, Chau-Ching Chiong, Huei Wang
{"title":"A 5.8-GHz GaAs based HBT amplifier with novel RF ESD protection","authors":"Bo-Jr Huang, Kun-You Lin, Chau-Ching Chiong, Huei Wang","doi":"10.23919/eumc.2009.5296381","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296381","url":null,"abstract":"In this paper, a 5.8-GHz amplifier with novel RF electrostatic discharge (ESD) protection is proposed in GaAs 2-µm HBT process. The amplifier incorporates with the ESD devices to form a band pass filter (BPF) structure with good impedance matching for RF ESD protection. In the mean while, an amplifier without ESD protection and another with conventional ESD protection are fabricated in parallel for comparison. This proposed ESD-protected amplifier features much higher ESD robustness and better RF performance than the conventional design. The RF ESD protection circuit has eight discharging paths which sustains more than 19.8-kV voltage level of human body model (HBM) and 7-kV of machine model (MM).","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127297028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A linearity improved GaAs pHEMT power amplifier using common-gate/common-source circuit topology 一种采用共门/共源电路拓扑结构的线性度改进的GaAs pHEMT功率放大器
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296158
F. Huang, Hong-Yeh Chang, Y. Chan
{"title":"A linearity improved GaAs pHEMT power amplifier using common-gate/common-source circuit topology","authors":"F. Huang, Hong-Yeh Chang, Y. Chan","doi":"10.23919/eumc.2009.5296158","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296158","url":null,"abstract":"A power amplifier using the common-gate (CG)/common-source (CS) circuit topology to implement the linearity improvement technique has been designed and implemented in 0.15 µm GaAs pHEMT technique for WLAN/WiMAX applications. The simulation analysis reveals that the CG circuit provides the characteristics of gain and phase compensation to improve the nonlinearity of CS circuit. Combining the CG circuit with CS amplifier can achieve the low signal distortion without consuming dc power and losing the signal gain, while operating at high output power. The power amplifier including the on-chip input/output matching networks is performed in Class-AB operation with a quiescent current of 320 mA and a linear gain of 16 dB under a 5.5 V dc supply. The amplifier also exhibits the power performances of the 1-dB compression point and the saturation power are 27.5 dBm and 29.5 dBm, containing the maximum power-added efficiency (PAE) up to 25 %. With the two-tone intermodulation distortion (IMD) testing, the measured IMD3 is close to −35 dBc under an output power of 25 dBm.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130640540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Experimental research into non-quasi-static phenomena in monolithic pHEMT devices 单片pHEMT器件非准静态现象的实验研究
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296216
T. Martín-Guerrero, A. Santarelli, C. Camacho-Peñalosa
{"title":"Experimental research into non-quasi-static phenomena in monolithic pHEMT devices","authors":"T. Martín-Guerrero, A. Santarelli, C. Camacho-Peñalosa","doi":"10.23919/eumc.2009.5296216","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296216","url":null,"abstract":"Non-quasi-static phenomena in a family of monolithic pHEMT devices has been researched. The results confirm that these phenomena must be taken into account for a reliable simulation in the millimetre-wave range and also that a simple small signal compact model with excellent scalability can accurately account for these phenomena. A full bias-dependent compact model which can be easily converted into a large-signal model compatible with most nonlinear simulators is also presented.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134634312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
59–71GHz wideband MMIC balanced power amplifier in a 0.13um SiGe technology 59-71GHz宽带MMIC平衡功率放大器，采用0.13um SiGe技术
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5295926
N. Demirel, E. Kerhervé, R. Plana, D. Pache, D. Belot
{"title":"59–71GHz wideband MMIC balanced power amplifier in a 0.13um SiGe technology","authors":"N. Demirel, E. Kerhervé, R. Plana, D. Pache, D. Belot","doi":"10.23919/eumc.2009.5295926","DOIUrl":"https://doi.org/10.23919/eumc.2009.5295926","url":null,"abstract":"This paper presents the performance of a wideband 0.13µm BiCMOS SiGe power amplifier (PA) for millimeter wave (mmW) applications. The design and the measured results of a monolithic integrated low-voltage PA are reported. A balanced four-stage common emitter circuit topology was used to achieve greater than 17dB of power gain from 59 GHz to 71GHz. As a result, the amplifier delivers 18dBm of maximum RF output power and 14.5dBm output power at 1dB compression. The circuit shows 7.8% of power added efficiency (PAE) from a 1.8V supply voltage at 65 GHz. The power amplifier was fully integrated including matching elements and bias circuit. The matching networks use coplanar waveguide (CPW) lines and MIM capacitors for high integration purpose.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132882764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
60 GHz-band modules for multi beam wireless broadband communication system 用于多波束无线宽带通信系统的60 ghz频段模块
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296181
K. Kawakami, Y. Kitsukawa, S. Miho, K. Mori, T. Yuasa, M. Hieda, M. Miyazaki
{"title":"60 GHz-band modules for multi beam wireless broadband communication system","authors":"K. Kawakami, Y. Kitsukawa, S. Miho, K. Mori, T. Yuasa, M. Hieda, M. Miyazaki","doi":"10.23919/eumc.2009.5296181","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296181","url":null,"abstract":"This paper describes a 60 GHz-band MMIC chipset which consists of amplifiers, mixer, and switch, and two modules integrated on multi-layer LTCC substrates for multi beam access point of the wireless broadband communication systems. We are studying the “multi beam” access-point to provide the high speed, secure, and effective wireless link to the wide cover area. To reduce the out-of-band spurious, the modules employ the low spurious and band-limited circuits, which are the low spurious quadruple harmonic image rejection mixer, the power amplifier with the short stubs using series-connected metalinsulator-metal capacitors, and the switch using FET resonators. Therefore the modules are achieved low spurious characteristics. Each fabricated MMIC and module demonstrates with good functionality.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130710369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A fully integrated 2.4/3.4 GHz Dual-band CMOS power amplifier with variable inductor 全集成2.4/3.4 GHz双带可变电感CMOS功率放大器
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296458
Hyunjin Yoo, Kang Hyuk Lee, Hyukjun Oh, Y. Eo
{"title":"A fully integrated 2.4/3.4 GHz Dual-band CMOS power amplifier with variable inductor","authors":"Hyunjin Yoo, Kang Hyuk Lee, Hyukjun Oh, Y. Eo","doi":"10.23919/eumc.2009.5296458","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296458","url":null,"abstract":"A 2.4/3.4 GHz Dual-band CMOS power amplifier using proposed variable inductor is presented. The variable inductor is used for the load of driver amplifier stage. The measured P1dB and PAE of dual band PA is 22.4dBm and 28.8% at 2.4GHz, and 18.8dBm and 14.4% at 3.4GHz, respectively. Also the measured output power at which the achieved EVM is −25dB is 15dBm at 2.4GHz and 12.7dBm at 3.4GHz. The chip is fabricated using 0.13um CMOS process and occupies 1.2 mm × 1 mm including pads.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115716380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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