A fully integrated 2.4/3.4 GHz Dual-band CMOS power amplifier with variable inductor

Abstract

A 2.4/3.4 GHz Dual-band CMOS power amplifier using proposed variable inductor is presented. The variable inductor is used for the load of driver amplifier stage. The measured P1dB and PAE of dual band PA is 22.4dBm and 28.8% at 2.4GHz, and 18.8dBm and 14.4% at 3.4GHz, respectively. Also the measured output power at which the achieved EVM is −25dB is 15dBm at 2.4GHz and 12.7dBm at 3.4GHz. The chip is fabricated using 0.13um CMOS process and occupies 1.2 mm × 1 mm including pads.