Experimental research into non-quasi-static phenomena in monolithic pHEMT devices

Abstract

Non-quasi-static phenomena in a family of monolithic pHEMT devices has been researched. The results confirm that these phenomena must be taken into account for a reliable simulation in the millimetre-wave range and also that a simple small signal compact model with excellent scalability can accurately account for these phenomena. A full bias-dependent compact model which can be easily converted into a large-signal model compatible with most nonlinear simulators is also presented.