单片pHEMT器件非准静态现象的实验研究

2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI:10.23919/eumc.2009.5296216

T. Martín-Guerrero, A. Santarelli, C. Camacho-Peñalosa

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引用次数: 3

摘要

研究了一类单片pHEMT器件的非准静态现象。结果表明，要在毫米波范围内进行可靠的仿真，必须考虑这些现象，而且一个简单的小信号紧凑模型具有良好的可扩展性，可以准确地考虑这些现象。提出了一种完全依赖于偏置的紧凑模型，该模型可以很容易地转换为与大多数非线性模拟器兼容的大信号模型。

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Experimental research into non-quasi-static phenomena in monolithic pHEMT devices

Non-quasi-static phenomena in a family of monolithic pHEMT devices has been researched. The results confirm that these phenomena must be taken into account for a reliable simulation in the millimetre-wave range and also that a simple small signal compact model with excellent scalability can accurately account for these phenomena. A full bias-dependent compact model which can be easily converted into a large-signal model compatible with most nonlinear simulators is also presented.

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2009 European Microwave Integrated Circuits Conference (EuMIC)

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