用于w波段收发器的GaN MMIC放大器

S. Masuda, T. Ohki, K. Makiyama, M. Kanamura, N. Okamoto, H. Shigematsu, K. Imanishi, T. Kikkawa, K. Joshin, N. Hara
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引用次数: 40

摘要

本文提出了一种基于接地共面波导(GCPW)的w波段单片微波集成电路(MMIC)放大器,采用0.12µm GaN HEMT技术。自制的四级低噪声放大器(LNA)在76.5 GHz时表现出创纪录的23 dB增益,在80 GHz时首次报道的噪声系数(NF)为3.8 dB。另一种MMIC功率放大器(PA)在76.5 GHz连续波(CW)工作时提供25.4 dBm的输出功率。据我们所知,这是在w波段首次展示GaN LNA以及具有GCPW的GaN mmic。此外,还介绍了一种防止w波段MMIC不稳定的实用设计技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
GaN MMIC amplifiers for W-band transceivers
This paper presents W-band monolithic microwave integrated circuit (MMIC) amplifiers with grounded coplanar waveguide (GCPW) in 0.12µm GaN HEMT technology. A fabricated four-stage low-noise amplifier (LNA) exhibited a record gain of 23 dB at 76.5 GHz and a first reported noise figure (NF) of 3.8 dB at 80 GHz for any W-band GaN MMIC. Another MMIC power amplifier (PA) delivered an output power of 25.4 dBm at 76.5 GHz with continuous wave (CW) operation. To our knowledge, this is the first demonstration of GaN LNA as well as GaN MMICs with GCPW in the W-band. In addition, a practical design technique to prevent instability of the W-band MMIC is described.
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