全集成2.4/3.4 GHz双带可变电感CMOS功率放大器

2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI:10.23919/eumc.2009.5296458

Hyunjin Yoo, Kang Hyuk Lee, Hyukjun Oh, Y. Eo

{"title":"全集成2.4/3.4 GHz双带可变电感CMOS功率放大器","authors":"Hyunjin Yoo, Kang Hyuk Lee, Hyukjun Oh, Y. Eo","doi":"10.23919/eumc.2009.5296458","DOIUrl":null,"url":null,"abstract":"A 2.4/3.4 GHz Dual-band CMOS power amplifier using proposed variable inductor is presented. The variable inductor is used for the load of driver amplifier stage. The measured P1dB and PAE of dual band PA is 22.4dBm and 28.8% at 2.4GHz, and 18.8dBm and 14.4% at 3.4GHz, respectively. Also the measured output power at which the achieved EVM is −25dB is 15dBm at 2.4GHz and 12.7dBm at 3.4GHz. The chip is fabricated using 0.13um CMOS process and occupies 1.2 mm × 1 mm including pads.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A fully integrated 2.4/3.4 GHz Dual-band CMOS power amplifier with variable inductor\",\"authors\":\"Hyunjin Yoo, Kang Hyuk Lee, Hyukjun Oh, Y. Eo\",\"doi\":\"10.23919/eumc.2009.5296458\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 2.4/3.4 GHz Dual-band CMOS power amplifier using proposed variable inductor is presented. The variable inductor is used for the load of driver amplifier stage. The measured P1dB and PAE of dual band PA is 22.4dBm and 28.8% at 2.4GHz, and 18.8dBm and 14.4% at 3.4GHz, respectively. Also the measured output power at which the achieved EVM is −25dB is 15dBm at 2.4GHz and 12.7dBm at 3.4GHz. The chip is fabricated using 0.13um CMOS process and occupies 1.2 mm × 1 mm including pads.\",\"PeriodicalId\":148226,\"journal\":{\"name\":\"2009 European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"71 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/eumc.2009.5296458\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/eumc.2009.5296458","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

设计了一种基于可变电感的2.4/3.4 GHz双频CMOS功率放大器。可变电感用于驱动放大级的负载。双频段PA的实测P1dB和PAE在2.4GHz时分别为22.4dBm和28.8%，在3.4GHz时分别为18.8dBm和14.4%。测量到的EVM为- 25dB时的输出功率在2.4GHz时为15dBm，在3.4GHz时为12.7dBm。该芯片采用0.13um CMOS工艺制造，包括焊片在内的尺寸为1.2 mm × 1 mm。

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A fully integrated 2.4/3.4 GHz Dual-band CMOS power amplifier with variable inductor

A 2.4/3.4 GHz Dual-band CMOS power amplifier using proposed variable inductor is presented. The variable inductor is used for the load of driver amplifier stage. The measured P1dB and PAE of dual band PA is 22.4dBm and 28.8% at 2.4GHz, and 18.8dBm and 14.4% at 3.4GHz, respectively. Also the measured output power at which the achieved EVM is −25dB is 15dBm at 2.4GHz and 12.7dBm at 3.4GHz. The chip is fabricated using 0.13um CMOS process and occupies 1.2 mm × 1 mm including pads.

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2009 European Microwave Integrated Circuits Conference (EuMIC)

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