X-Band GaN-HEMT LNA performance versus robustness trade-off

Abstract

In this paper design, fabrication and test of three X-Band robust LNA MMICs in microstrip GaN technology are presented to better understand the key aspects of performance versus robustness trade-off for said components. In particular LNAs with different number of amplification stages, input device gate peripheries and topologies have been evaluated with the objective of achieving in the 8–11 GHz frequency range a NF better than 2.5dB, associated gain of circa 20 dB and overdrive power survivability better than 38 dBm.