基于电子器件低频特性的a类功率放大器设计技术

2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI:10.23919/eumc.2009.5296393

A. Raffo, S. Di Falco, V. Vadalà, F. Scappaviva, G. Vannini

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引用次数: 1

摘要

本文提出了一种新的a类功率放大器设计方法。这种技术主要基于低频特性，可以实现在微波频率下通过昂贵的非线性设置获得的相同设计目标。为了验证所提设计技术的有效性，本文对基于氮化镓技术的a类功率放大器设计实例进行了深入研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Class-A power amplifier design technique based on electron device low-frequency characterization

In this paper, a new approach to class-A power amplifier design is proposed. Such a technique, which is mostly based on low-frequency characterisation, allows to reach the same design goals obtained through expensive nonlinear setups operating at microwave frequencies. In order to demonstrate the effectiveness of the proposed design technique, a practical example of class-A power amplifier design, based on GaN technology, is deeply investigated.

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2009 European Microwave Integrated Circuits Conference (EuMIC)

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