{"title":"采用紧凑MEMS阻抗匹配网络的可调谐微波放大器","authors":"F. Domingue, A. Kouki, R. Mansour","doi":"10.23919/eumc.2009.5296314","DOIUrl":null,"url":null,"abstract":"This paper presents the design of a reconfigurable RF amplifier based on compact tunable MEMS impedance matching network for low frequency applications. The amplifier uses a pHEMT transistor fabricated in GaAs technology while the MEMS circuits were fabricated using a dedicated RF MEMS process. The reconfigurable network is based on a slow-wave distributed MEMS transmission line (SW-DMTL) presenting a wide impedance coverage at low frequencies. The performance of the amplifier is controlled for frequencies from 3.5 to 9 GHz while the gain is kept around the maximum available stable gain. Moreover, the amplifier operates under various source impedance conditions.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Tunable microwave amplifier using a compact MEMS impedance matching network\",\"authors\":\"F. Domingue, A. Kouki, R. Mansour\",\"doi\":\"10.23919/eumc.2009.5296314\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design of a reconfigurable RF amplifier based on compact tunable MEMS impedance matching network for low frequency applications. The amplifier uses a pHEMT transistor fabricated in GaAs technology while the MEMS circuits were fabricated using a dedicated RF MEMS process. The reconfigurable network is based on a slow-wave distributed MEMS transmission line (SW-DMTL) presenting a wide impedance coverage at low frequencies. The performance of the amplifier is controlled for frequencies from 3.5 to 9 GHz while the gain is kept around the maximum available stable gain. Moreover, the amplifier operates under various source impedance conditions.\",\"PeriodicalId\":148226,\"journal\":{\"name\":\"2009 European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"84 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/eumc.2009.5296314\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/eumc.2009.5296314","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Tunable microwave amplifier using a compact MEMS impedance matching network
This paper presents the design of a reconfigurable RF amplifier based on compact tunable MEMS impedance matching network for low frequency applications. The amplifier uses a pHEMT transistor fabricated in GaAs technology while the MEMS circuits were fabricated using a dedicated RF MEMS process. The reconfigurable network is based on a slow-wave distributed MEMS transmission line (SW-DMTL) presenting a wide impedance coverage at low frequencies. The performance of the amplifier is controlled for frequencies from 3.5 to 9 GHz while the gain is kept around the maximum available stable gain. Moreover, the amplifier operates under various source impedance conditions.
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