发布求助
文献互助 智能选刊 最新文献

2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers最新文献

筛选
英文 中文
A tunable and program-erasable capacitor on Si with excellent tuning memory 一种可调谐和可编程擦除的硅电容器，具有优异的调谐存储器
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320589
C. Lai, C. Lee, A. Chin, C. Zhu, M. Li, S. Mcalister, D. Kwong
{"title":"A tunable and program-erasable capacitor on Si with excellent tuning memory","authors":"C. Lai, C. Lee, A. Chin, C. Zhu, M. Li, S. Mcalister, D. Kwong","doi":"10.1109/RFIC.2004.1320589","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320589","url":null,"abstract":"A novel tunable and program-erasable high-/spl kappa/ AlN MIS capacitor is demonstrated for the first time with excellent tuning memory, which is useful to tune the impedance mismatching and resonance frequency without always having a connected voltage bias circuit. A large C/sub max//C/sub min/ tunability of 12 is obtained due to the high-/spl kappa/ AlN dielectric with high 5 /spl mu/F//spl mu/m/sup 2/ capacitance density. Good tuning memory is evidenced from the small V/sub th/ variation after program or erase at +4 V or -4 V for 10,000 s and the potential of years long extrapolated memory time.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116950769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Analysis of microwave noise sources in 150 GHz SiGe HBTs 150 GHz SiGe hbt中微波噪声源分析
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320600
P. Sakalas, Michael Schroter, R. F. Scholz, Hao Jiang, M. Racanelli
{"title":"Analysis of microwave noise sources in 150 GHz SiGe HBTs","authors":"P. Sakalas, Michael Schroter, R. F. Scholz, Hao Jiang, M. Racanelli","doi":"10.1109/RFIC.2004.1320600","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320600","url":null,"abstract":"Bias dependent microwave noise characteristics of 150 GHz SiGe HBTs were measured in the 2-26 GHz frequency range. The characteristics are compared with the compact bipolar transistor model HICUM. For noise source analysis and decomposition, a detailed small-signal model with corresponding parameters is employed which is based on HICUM. In particular, the influence of the various noise sources and mechanisms on the minimum noise figure is investigated. Correlation between base and collector current shot noise in SiGe is found to reduce NF/sub min/ in the current density and frequency range of investigation.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"44 21","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120812508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A reference-current-based, programmable IF AGC for a DAB receiver 基于参考电流的可编程中频AGC，用于DAB接收机
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320527
Yen-Horng Chen
{"title":"A reference-current-based, programmable IF AGC for a DAB receiver","authors":"Yen-Horng Chen","doi":"10.1109/RFIC.2004.1320527","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320527","url":null,"abstract":"The paper proposes an IF receiver chain with a reference-current-based, programmable AGC for a DAB receiver. The IF receiver chain contains a low noise and high gain amplifier, a variable gain amplifier with more than 60 dB tuning gain range, a highly linear amplifier, and an AGC feedback loop. The output level setting of this programmable AGC is based on a reference-current design, which is different from conventional reference-voltage-based designs. Furthermore, it yields an input dynamic range of at least 60 dB and provides a programmable constant output. The circuit is implemented using a TSMC 0.35 /spl mu/m SiGe process with 3.3 V power supply and packaged in plastic TQFP package.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"323 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122873306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Experimental verification of the effect of carrier heating on channel noise in deep submicron NMOSFETs by substrate bias 基于衬底偏压的深亚微米nmosfet载流子加热对通道噪声影响的实验验证
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320692
Hong Wang, R. Zeng
{"title":"Experimental verification of the effect of carrier heating on channel noise in deep submicron NMOSFETs by substrate bias","authors":"Hong Wang, R. Zeng","doi":"10.1109/RFIC.2004.1320692","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320692","url":null,"abstract":"RF noise in 0.18 /spl mu/m NMOSFETs has been characterized, concerning the contribution of carrier heating and hot carrier effects on channel noise. The role of carrier heating and hot carrier effects on the excess thermal noise observed in short channel MOSFETs is assessed via a novel approach that modulates the channel carrier heating and number of hot carriers using substrate bias. The experimental evidence shown in this study indicates that the hot carrier effect does not show too much impact on the channel noise of deep submicron MOSFETs.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124521806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Low power low phase noise 3.9GHz SiGe VCO with data modulation correction loop 具有数据调制校正环路的低功耗低相位噪声3.9GHz SiGe压控振荡器
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320594
M. Mostafa, S. Tuncer, G. Luff
{"title":"Low power low phase noise 3.9GHz SiGe VCO with data modulation correction loop","authors":"M. Mostafa, S. Tuncer, G. Luff","doi":"10.1109/RFIC.2004.1320594","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320594","url":null,"abstract":"A 3.9 GHz LC VCO is fabricated using a 0.35 /spl mu/m SiGe BiCMOS process. The VCO is modulated through a modulation port in transmit mode. The VCO utilizes a modulation correction loop to compensate the modulation deviation due to the variation in the tuning circuit. The VCO measured phase noise is -140 dBc at 8 MHz offset, while draining 4 mA from a 2.5 V regulated supply. A 25% tuning range was also measured.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129563885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Improved InGaP/GaAs HBTs AC performance and linearity with collector design 采用集电极设计提高了InGaP/GaAs HBTs的交流性能和线性度
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320631
Che-ming Wang, H. Hsu, H. Shu, Yu-An Liu, Y. Hsin
{"title":"Improved InGaP/GaAs HBTs AC performance and linearity with collector design","authors":"Che-ming Wang, H. Hsu, H. Shu, Yu-An Liu, Y. Hsin","doi":"10.1109/RFIC.2004.1320631","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320631","url":null,"abstract":"An additional thin high-doping layer within the collector of InGaP/GaAs HBTs has been designed and fabricated to improve the Kirk effect threshold current, cutoff frequency, and power distortion, while keeping a high breakdown voltage. The proposed structure effectively relieves the Kirk effect and results in a higher current drive and cut-off frequency. From the extracted C/sub BC/ with V/sub CB/, HBTs with non-uniform collector doping demonstrate less base-collector capacitance variation than that in baseline HBTs, due to the depletion region limited by the thin, high-doping layer. The experimental results on third-order intermodulation demonstrate a significant improvement in OIP3 by as large as 6 dB. This proposed InGaP/GaAs HBT, with non-uniform collector doping, is well suited to replace current InGaP/GaAs HBTs for power amplifier applications, due to its significantly improved linearity and current/frequency capability, with negligible impact on DC characteristics and fabrication.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125312396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SiGe front-end transceiver components for 802.11a WLAN applications 用于802.11a WLAN应用的SiGe前端收发器组件
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320674
N. Song, Dohyong Kim, J. Burm, Jin Soo Park
{"title":"SiGe front-end transceiver components for 802.11a WLAN applications","authors":"N. Song, Dohyong Kim, J. Burm, Jin Soo Park","doi":"10.1109/RFIC.2004.1320674","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320674","url":null,"abstract":"This paper presents the design and fabrication of 5-GHz Tx/Rx RF front-end components for IEEE 802.11a WLAN using 0.5 /spl mu/m SiGe BiCMOS technology. All degeneration inductance employed only the down-bond inductors, and all matching circuits were employed on chip design except the input DC blocking capacitors. The effects of feedback resistance in the LNA on gain, input match, noise figure, and IP3 performance are investigated. The packaged LNA exhibited an NF of 2.5 dB with a gain of 16.5 dB at 5.25 GHz and an IIP3 of -10.5 dBm. The Rx/Tx mixers exhibited conversion gains of -2.1/-8.3 dB and IIP3s of 0.0/2.4 dBm, respectively. The driver amplifier achieved a gain of 26.5 dB and an OIP3 of 19.8 dBm. The overall NF and IIP3 of receive chain (from antenna to Rx mixer) were estimated to be 6.5 dB and -12.8 dBm, respectively.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128343856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A CMOS quad-band-/spl Sigma//spl Delta/-transceiver for GSM-EDGE with dual mode transmitter architecture for low noise and high linearity 用于GSM-EDGE的CMOS四带/spl Sigma//spl Delta/-收发器，具有双模发射机结构，具有低噪声和高线性度
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320644
M. Simon, R. Weigel, B. Neurauter, G. Marzinger
{"title":"A CMOS quad-band-/spl Sigma//spl Delta/-transceiver for GSM-EDGE with dual mode transmitter architecture for low noise and high linearity","authors":"M. Simon, R. Weigel, B. Neurauter, G. Marzinger","doi":"10.1109/RFIC.2004.1320644","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320644","url":null,"abstract":"A 120 nm CMOS quad-band transceiver for GSM EDGE with a dual mode transmitter architecture and a constant gain direct conversion receiver has been developed. In GMSK mode, a direct conversion transmitter with third order /spl Sigma//spl Delta/-modulation loop modulates the phase of the VCO. The output signal is amplified by a low noise power efficient limiting output buffer with 6 dBm output power. A high linearity vector modulator is switched on to process the 8-PSK modulated EDGE signal with additional amplitude modulation. Neither TX-SAW nor third harmonic filter are needed for system integration into a handset to fulfil the GSM-EDGE specification.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117214960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A DC offset free RF front-end for direct conversion receivers 用于直接转换接收机的无直流偏置射频前端
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320663
Yuanjin Zheng, Shin Woei Leow, Dong Han, Y. Xu
{"title":"A DC offset free RF front-end for direct conversion receivers","authors":"Yuanjin Zheng, Shin Woei Leow, Dong Han, Y. Xu","doi":"10.1109/RFIC.2004.1320663","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320663","url":null,"abstract":"A DC offset free RF front-end receiver architecture, combined with a feedback tuning loop for direct conversion, is proposed. The front-end receiver is implemented in a 0.35 /spl mu/m CMOS process and achieves a measured DC offset less than 2 mV over an RF input range of -100 to 0 dBm and LO input of -20 to 15 dBm, respectively.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126481888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
MEMS SiGe technologies for advanced wireless communications 用于先进无线通信的MEMS SiGe技术
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320586
J. Busquere, N. Do, F. Bougriha, P. Pons, K. Grenier, D. Dubuc, A. Boukabache, H. Schumacher, P. Abele, A. Rydberg, E. Ojefors, P. Ancey, G. Bouche, R. Plana
{"title":"MEMS SiGe technologies for advanced wireless communications","authors":"J. Busquere, N. Do, F. Bougriha, P. Pons, K. Grenier, D. Dubuc, A. Boukabache, H. Schumacher, P. Abele, A. Rydberg, E. Ojefors, P. Ancey, G. Bouche, R. Plana","doi":"10.1109/RFIC.2004.1320586","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320586","url":null,"abstract":"This paper shows the potentialities of merging MEMS and micromachining with SiGe technologies in order to speed up the performance of the next generation of front ends, in term of flexibility, reconfigurability and adaptability. MEMS technologies are presented, based on BCB materials and BAW materials. Special attention is paid to ensure full compatibility between IC and MEMS. We have shown that very innovative functions could be considered by using this MEMSIC concept.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132185253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信