用于802.11a WLAN应用的SiGe前端收发器组件

N. Song, Dohyong Kim, J. Burm, Jin Soo Park
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引用次数: 5

摘要

本文介绍了采用0.5 /spl mu/m SiGe BiCMOS技术设计和制作用于IEEE 802.11a无线局域网的5 ghz Tx/Rx射频前端器件。所有退化电感仅采用下键电感,芯片设计中除输入直流阻塞电容外,其余匹配电路均采用。研究了LNA中反馈电阻对增益、输入匹配、噪声系数和IP3性能的影响。封装后的LNA在5.25 GHz时的NF为2.5 dB,增益为16.5 dB, IIP3为-10.5 dBm。Rx/Tx混频器的转换增益分别为-2.1/-8.3 dB和IIP3s分别为0.0/2.4 dBm。驱动放大器的增益为26.5 dB, OIP3为19.8 dBm。接收链(从天线到Rx混频器)的总体NF和IIP3估计分别为6.5 dB和-12.8 dBm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SiGe front-end transceiver components for 802.11a WLAN applications
This paper presents the design and fabrication of 5-GHz Tx/Rx RF front-end components for IEEE 802.11a WLAN using 0.5 /spl mu/m SiGe BiCMOS technology. All degeneration inductance employed only the down-bond inductors, and all matching circuits were employed on chip design except the input DC blocking capacitors. The effects of feedback resistance in the LNA on gain, input match, noise figure, and IP3 performance are investigated. The packaged LNA exhibited an NF of 2.5 dB with a gain of 16.5 dB at 5.25 GHz and an IIP3 of -10.5 dBm. The Rx/Tx mixers exhibited conversion gains of -2.1/-8.3 dB and IIP3s of 0.0/2.4 dBm, respectively. The driver amplifier achieved a gain of 26.5 dB and an OIP3 of 19.8 dBm. The overall NF and IIP3 of receive chain (from antenna to Rx mixer) were estimated to be 6.5 dB and -12.8 dBm, respectively.
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