A CMOS quad-band-/spl Sigma//spl Delta/-transceiver for GSM-EDGE with dual mode transmitter architecture for low noise and high linearity

M. Simon, R. Weigel, B. Neurauter, G. Marzinger
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引用次数: 13

Abstract

A 120 nm CMOS quad-band transceiver for GSM EDGE with a dual mode transmitter architecture and a constant gain direct conversion receiver has been developed. In GMSK mode, a direct conversion transmitter with third order /spl Sigma//spl Delta/-modulation loop modulates the phase of the VCO. The output signal is amplified by a low noise power efficient limiting output buffer with 6 dBm output power. A high linearity vector modulator is switched on to process the 8-PSK modulated EDGE signal with additional amplitude modulation. Neither TX-SAW nor third harmonic filter are needed for system integration into a handset to fulfil the GSM-EDGE specification.
用于GSM-EDGE的CMOS四带/spl Sigma//spl Delta/-收发器,具有双模发射机结构,具有低噪声和高线性度
研制了一种具有双模发射结构和恒增益直接转换接收机的120 nm CMOS四频GSM EDGE收发器。在GMSK模式下,一个带有三阶/spl Sigma//spl Delta/-调制环路的直接转换发射机调制VCO的相位。输出信号由输出功率为6 dBm的低噪声功率高效限制输出缓冲器放大。一个高线性矢量调制器被打开,以处理8-PSK调制的EDGE信号与额外的幅度调制。无论是TX-SAW还是三次谐波滤波器都不需要将系统集成到手机中以满足GSM-EDGE规范。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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