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2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers最新文献

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A high gain, low voltage folded-switching mixer with current-reuse in 0.18 /spl mu/m CMOS 一种在0.18 /spl mu/m CMOS中具有电流复用的高增益、低电压折叠开关混频器
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320517
V. Vidojkovic, J. van der Tang, A. Leeuwenburgh, A. V. van Roermund
{"title":"A high gain, low voltage folded-switching mixer with current-reuse in 0.18 /spl mu/m CMOS","authors":"V. Vidojkovic, J. van der Tang, A. Leeuwenburgh, A. V. van Roermund","doi":"10.1109/RFIC.2004.1320517","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320517","url":null,"abstract":"The scaling of CMOS technologies has a great impact on analog design. The most severe consequence is a reduction of the voltage supply. In this article, a new low voltage folded-switching mixer with current reuse, which operates at 1 V supply voltage, is discussed. The main advantages of the introduced mixer topology are: a high voltage gain, a moderate noise figure and an operation at low supply voltages. Full insight into mixer operation is given by analyzing voltage gain, noise figure, linearity (IIP3) and DC stability. The mixer is designed and implemented in 0.18 /spl mu/m CMOS technology with MIM capacitors as an option. The active chip area is 160 /spl mu/m/spl times/200 /spl mu/m. At 2.4 GHz, a single side band (SSB) noise figure of 13.9 dB, a voltage gain of 11.9 dB and IIP3 of -3 dBm are measured at a supply voltage of 1 V and with a power consumption of 3.2 mW.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121726892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Automatic antenna tuning for RF transmitter IC applying high Q antenna 应用高Q天线的射频发射集成电路天线自动调谐
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320666
A. Zolomy, F. Mernyei, J. Erdélyi, M. Pardoen, G. Toth
{"title":"Automatic antenna tuning for RF transmitter IC applying high Q antenna","authors":"A. Zolomy, F. Mernyei, J. Erdélyi, M. Pardoen, G. Toth","doi":"10.1109/RFIC.2004.1320666","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320666","url":null,"abstract":"Automatic antenna tuning circuitry is presented for high Q printed antennas. It is applied in a general purpose 0.6 /spl mu/m BiCMOS transmitter chip devoted to short range applications in the ISM bands (315, 434, 868 and 915 MHz). The circuitry maintains maximum output power without the application of external matching circuit and/or costly tuning procedures usually required to counter technological spreading. Real time compensation of environmental variations such as \"hand effect\" is also possible. As the efficiency of the driver stage is close to maximum with high Q antennas, the power consumption is reduced at the targeted output power ranges (-20...+10 dBm).","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122280634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A single-chip 75 GHz/0.35 /spl mu/m SiGe BiCMOS W-CDMA homodyne transceiver for UMTS mobiles 一种用于UMTS手机的75 GHz/0.35 /spl mu/m SiGe BiCMOS W-CDMA纯差收发器
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320528
W. Thomann, V. Thomas, R. Hagelauer, R. Weigel
{"title":"A single-chip 75 GHz/0.35 /spl mu/m SiGe BiCMOS W-CDMA homodyne transceiver for UMTS mobiles","authors":"W. Thomann, V. Thomas, R. Hagelauer, R. Weigel","doi":"10.1109/RFIC.2004.1320528","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320528","url":null,"abstract":"A single-chip, fully-integrated 3G UMTS/W-CDMA transceiver has been implemented in a standard 75-GHz/0.35 /spl mu/m SiGe BiCMOS process for use in FDD mobile terminals. The design comprises two integer-N/fractional-N synthesizers with fully integrated CMOS VCOs, on-chip tuning and PLL, a zero-IF receiver and a direct-conversion transmitter. The zero-IF receiver includes a differential-input, bipolar, low-noise amplifier (2nd LNA), a down-converter with CMOS Gilbert type mixers followed by a low-noise buffer amplifier, an analog active baseband filter of 5th-order with automatic on-chip filter calibration and interleaved with a programmable gain amplifier, and a programmable baseband output buffer. The direct-conversion transmitter includes a 4th-order analog active baseband filter, a bipolar direct modulation up-converter, and a variable gain RF amplifier with >80 dB gain control range, and a 3 dBm power amplifier driver. The transceiver is fully-programmable via two serial 3-wire-bus interfaces.. The device operates at 2.7-3.0 V supply and consumes 35 mA and 53-78 mA, in the receive mode and in the transmit mode, respectively. The transceiver is mounted in a small outline, 40-pin, leadless, 5.5/spl times/6.5 mm/sup 2/ surface mount package and fully complies with ARIB W-CDMA and UMTS standards.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124828266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
CMOS I/Q demodulator using a high-isolation and linear mixer for 2 GHz operation CMOS I/Q解调器采用高隔离和线性混频器为2 GHz工作
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320526
D. Sim
{"title":"CMOS I/Q demodulator using a high-isolation and linear mixer for 2 GHz operation","authors":"D. Sim","doi":"10.1109/RFIC.2004.1320526","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320526","url":null,"abstract":"An I/Q direct demodulator employing passive mixers and a phase shifter for 2 GHz operation is designed and implemented with 0.35 /spl mu/m CMOS technology. CMOS switching elements are used to improve the linearity and isolation property of the mixer. A DC bias to the switching elements is devised to reduce LO power for the passive mixer. This bias effect on linearity and isolation is analyzed. A low-loss simple RC/CR pair with a feedback network is used to reduce the LO power and maintain I/Q channel balance instead of using a poly-phase network. Measurements showed 15 dBm IIP3 (third order input intercept point) for 4 dBm LO power, 62 dBc isolation, and 2.8/spl deg/ phase imbalance.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124934997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A GaAs-based 3-40 GHz distributed mixer with cascode FET cells 一种基于gaas的3- 40ghz级联场效应晶体管分布式混频器
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320638
W. Ko, Y. Kwon
{"title":"A GaAs-based 3-40 GHz distributed mixer with cascode FET cells","authors":"W. Ko, Y. Kwon","doi":"10.1109/RFIC.2004.1320638","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320638","url":null,"abstract":"A broadband MMIC distributed mixer with cascode FET cells was developed using commercial GaAs PHEMT foundry. The fabricated distributed mixer with a size of 1.8 mm/spl times/1.0 mm showed a high conversion gain of 3.6 dB/spl plusmn/0.5 dB over 3 to 40 GHz RF frequency ranges at the low LO power level of 5 dBm with a fixed IF frequency of 1 GHz. An average single-sideband noise figure was 11.7 dB without IF post amplification. The LO-to-IF and LO-to-RF isolations were better than 19 dB over the entire operating frequency band. To our knowledge, this corresponds to the highest gain-bandwidth product (85 GHz) achieved from the wideband mixers.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127690107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
A fully integrated 39.8-/43-GHz VCO - featuring wide tuning range and low temperature drift - for single-chip MUX/DEMUX LSIs 一个完全集成的39.8-/43 ghz VCO -具有宽调谐范围和低温漂移-用于单片MUX/DEMUX lsi
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320608
T. Nakamura, T. Masuda, K. Ohhata, K. Watanabe, H. Yoshioka, T. Kusunoki, M. Tanabe, A. Koyama, T. Harada, K. Washio
{"title":"A fully integrated 39.8-/43-GHz VCO - featuring wide tuning range and low temperature drift - for single-chip MUX/DEMUX LSIs","authors":"T. Nakamura, T. Masuda, K. Ohhata, K. Watanabe, H. Yoshioka, T. Kusunoki, M. Tanabe, A. Koyama, T. Harada, K. Washio","doi":"10.1109/RFIC.2004.1320608","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320608","url":null,"abstract":"A fully integrated 39.8-/43-GHz switchable VCO was developed for practical single-chip MUX/DEMUX LSIs in 0.18 /spl mu/m SiGe BiCMOS technology . The VCO provides a clock signal for data rates of 39.8 and 43.0 Gbps. The VCO has a novel configuration of a half-frequency VCO and a frequency doubler to realize a 7 GHz tuning range, for tolerating process deviation and supporting dual mode operation. A new temperature compensation technique resulted in a 0.6% temperature fluctuation of oscillation frequency. Measured phase noise at a 1 MHz offset frequency was -85.0 dBc/Hz. Data transmission experiments between the MUX and DEMUX confirmed that this phase noise is allowable for use in 40-Gbps class network systems.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126288587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An analysis of the bias dependence of scattering parameters S/sub 11/ and S/sub 22/ of SiGe heterojunction bipolar transistors (HBTs) SiGe异质结双极晶体管散射参数S/sub 11/和S/sub 22/的偏置依赖性分析
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320695
Yo‐Sheng Lin, Hsiao-Bin Liang, Shey-Shi Lu
{"title":"An analysis of the bias dependence of scattering parameters S/sub 11/ and S/sub 22/ of SiGe heterojunction bipolar transistors (HBTs)","authors":"Yo‐Sheng Lin, Hsiao-Bin Liang, Shey-Shi Lu","doi":"10.1109/RFIC.2004.1320695","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320695","url":null,"abstract":"The anomalous dip in scattering parameter S/sub 11/ of SiGe heterojunction bipolar transistors (HBTs) is explained quantitatively for the first time. Our results show that for SiGe HBTs, the input impedance can be represented by a \"shifted\" series RC circuit at low frequencies and a \"shifted\" parallel RC circuit at high frequencies. The appearance of the anomalous dip of S/sub 11/ in a Smith chart is caused by this inherent ambivalent characteristic of the input impedance. It is found that under constant collector-emitter voltage (V/sub CE/), an increase of base current (which corresponds to a decrease of r/sub /spl pi// and an increase of g/sub m/) enhances the anomalous dip. In addition, the anomalous dip in S/sub 11/ of SiGe HBTs can also be interpreted in terms of poles and zeros.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"256 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117342906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A. quad 2.7 Gb/s parallel optical transceiver A.四路2.7 Gb/s并行光模块
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320511
J. Ahadian, M. Englekirk, M. Wong, T. Li, R. Hagan, R. Pommer, C. Kuznia
{"title":"A. quad 2.7 Gb/s parallel optical transceiver","authors":"J. Ahadian, M. Englekirk, M. Wong, T. Li, R. Hagan, R. Pommer, C. Kuznia","doi":"10.1109/RFIC.2004.1320511","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320511","url":null,"abstract":"The realization of short-reach parallel optical interconnects based on multi-mode fiber ribbons requires the coalescence of vertical-cavity surface-emitting lasers, photodetectors, transmit and receiver circuitry, and an optical power control system within a compact assembly. This paper describes a solution based on silicon-on-sapphire IC technology and demonstrates an optical transceiver featuring four transmitters and four receivers, each operating at up to 2.7 Gb/s. Flip-chip bonding is used to attach four-element laser and photodetector die to the IC. Optical signals propagate through the transparent sapphire substrate. Lateral photodiodes implemented in the IC process are used to monitor the optical output power, and embedded controllers have been developed to regulate this power on a per-channel basis. Key circuit designs are presented, following a summary of the optoelectronic chip-scale packaging technology.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132320201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Reliability evaluation of Gilbert cell mixer based on a hot-carrier stressed device degradation model 基于热载流子应力器件退化模型的Gilbert槽型混频器可靠性评估
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320630
Wei-Cheng Lin, Long-Jei Du, Y. King
{"title":"Reliability evaluation of Gilbert cell mixer based on a hot-carrier stressed device degradation model","authors":"Wei-Cheng Lin, Long-Jei Du, Y. King","doi":"10.1109/RFIC.2004.1320630","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320630","url":null,"abstract":"A comprehensive device degradation model is built for circuit-level reliability evaluation. A sub-circuit model, describing the device degradation under hot-carrier stress is proposed. Combining with the original model, predicting device characteristic changes under FN stressing in our previous work, a complete device degradation model is presented with fairly good agreement with both DC and AC characteristics. In addition, the reliability of a mixed-mode Gilbert cell mixer is investigated and analyzed.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130739748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Radio on module (RoM): integrating RF systems on organic substrate 射频模块(RoM):在有机基板上集成射频系统
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320582
A. Das, A. Tungare, R. Croswell, P. Bowles, J. Mondal, D. Kaczman
{"title":"Radio on module (RoM): integrating RF systems on organic substrate","authors":"A. Das, A. Tungare, R. Croswell, P. Bowles, J. Mondal, D. Kaczman","doi":"10.1109/RFIC.2004.1320582","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320582","url":null,"abstract":"A brief review of the state of the art of module technology, on inexpensive organic substrates, is presented. Key enabling technologies that can make radio on module (RoM) a reality are identified. Although single chip radio is a catchword, the authors believe that RoM is a more likely scenario in the future due to the immense design flexibility it presents.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123738112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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