{"title":"基于热载流子应力器件退化模型的Gilbert槽型混频器可靠性评估","authors":"Wei-Cheng Lin, Long-Jei Du, Y. King","doi":"10.1109/RFIC.2004.1320630","DOIUrl":null,"url":null,"abstract":"A comprehensive device degradation model is built for circuit-level reliability evaluation. A sub-circuit model, describing the device degradation under hot-carrier stress is proposed. Combining with the original model, predicting device characteristic changes under FN stressing in our previous work, a complete device degradation model is presented with fairly good agreement with both DC and AC characteristics. In addition, the reliability of a mixed-mode Gilbert cell mixer is investigated and analyzed.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Reliability evaluation of Gilbert cell mixer based on a hot-carrier stressed device degradation model\",\"authors\":\"Wei-Cheng Lin, Long-Jei Du, Y. King\",\"doi\":\"10.1109/RFIC.2004.1320630\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A comprehensive device degradation model is built for circuit-level reliability evaluation. A sub-circuit model, describing the device degradation under hot-carrier stress is proposed. Combining with the original model, predicting device characteristic changes under FN stressing in our previous work, a complete device degradation model is presented with fairly good agreement with both DC and AC characteristics. In addition, the reliability of a mixed-mode Gilbert cell mixer is investigated and analyzed.\",\"PeriodicalId\":140604,\"journal\":{\"name\":\"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2004.1320630\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2004.1320630","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reliability evaluation of Gilbert cell mixer based on a hot-carrier stressed device degradation model
A comprehensive device degradation model is built for circuit-level reliability evaluation. A sub-circuit model, describing the device degradation under hot-carrier stress is proposed. Combining with the original model, predicting device characteristic changes under FN stressing in our previous work, a complete device degradation model is presented with fairly good agreement with both DC and AC characteristics. In addition, the reliability of a mixed-mode Gilbert cell mixer is investigated and analyzed.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
