A single-chip 75 GHz/0.35 /spl mu/m SiGe BiCMOS W-CDMA homodyne transceiver for UMTS mobiles

Abstract

A single-chip, fully-integrated 3G UMTS/W-CDMA transceiver has been implemented in a standard 75-GHz/0.35 /spl mu/m SiGe BiCMOS process for use in FDD mobile terminals. The design comprises two integer-N/fractional-N synthesizers with fully integrated CMOS VCOs, on-chip tuning and PLL, a zero-IF receiver and a direct-conversion transmitter. The zero-IF receiver includes a differential-input, bipolar, low-noise amplifier (2nd LNA), a down-converter with CMOS Gilbert type mixers followed by a low-noise buffer amplifier, an analog active baseband filter of 5th-order with automatic on-chip filter calibration and interleaved with a programmable gain amplifier, and a programmable baseband output buffer. The direct-conversion transmitter includes a 4th-order analog active baseband filter, a bipolar direct modulation up-converter, and a variable gain RF amplifier with >80 dB gain control range, and a 3 dBm power amplifier driver. The transceiver is fully-programmable via two serial 3-wire-bus interfaces.. The device operates at 2.7-3.0 V supply and consumes 35 mA and 53-78 mA, in the receive mode and in the transmit mode, respectively. The transceiver is mounted in a small outline, 40-pin, leadless, 5.5/spl times/6.5 mm/sup 2/ surface mount package and fully complies with ARIB W-CDMA and UMTS standards.