C. Lai, C. Lee, A. Chin, C. Zhu, M. Li, S. Mcalister, D. Kwong
{"title":"一种可调谐和可编程擦除的硅电容器，具有优异的调谐存储器","authors":"C. Lai, C. Lee, A. Chin, C. Zhu, M. Li, S. Mcalister, D. Kwong","doi":"10.1109/RFIC.2004.1320589","DOIUrl":null,"url":null,"abstract":"A novel tunable and program-erasable high-/spl kappa/ AlN MIS capacitor is demonstrated for the first time with excellent tuning memory, which is useful to tune the impedance mismatching and resonance frequency without always having a connected voltage bias circuit. A large C/sub max//C/sub min/ tunability of 12 is obtained due to the high-/spl kappa/ AlN dielectric with high 5 /spl mu/F//spl mu/m/sup 2/ capacitance density. Good tuning memory is evidenced from the small V/sub th/ variation after program or erase at +4 V or -4 V for 10,000 s and the potential of years long extrapolated memory time.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A tunable and program-erasable capacitor on Si with excellent tuning memory\",\"authors\":\"C. Lai, C. Lee, A. Chin, C. Zhu, M. Li, S. Mcalister, D. Kwong\",\"doi\":\"10.1109/RFIC.2004.1320589\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel tunable and program-erasable high-/spl kappa/ AlN MIS capacitor is demonstrated for the first time with excellent tuning memory, which is useful to tune the impedance mismatching and resonance frequency without always having a connected voltage bias circuit. A large C/sub max//C/sub min/ tunability of 12 is obtained due to the high-/spl kappa/ AlN dielectric with high 5 /spl mu/F//spl mu/m/sup 2/ capacitance density. Good tuning memory is evidenced from the small V/sub th/ variation after program or erase at +4 V or -4 V for 10,000 s and the potential of years long extrapolated memory time.\",\"PeriodicalId\":140604,\"journal\":{\"name\":\"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2004.1320589\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2004.1320589","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A tunable and program-erasable capacitor on Si with excellent tuning memory
A novel tunable and program-erasable high-/spl kappa/ AlN MIS capacitor is demonstrated for the first time with excellent tuning memory, which is useful to tune the impedance mismatching and resonance frequency without always having a connected voltage bias circuit. A large C/sub max//C/sub min/ tunability of 12 is obtained due to the high-/spl kappa/ AlN dielectric with high 5 /spl mu/F//spl mu/m/sup 2/ capacitance density. Good tuning memory is evidenced from the small V/sub th/ variation after program or erase at +4 V or -4 V for 10,000 s and the potential of years long extrapolated memory time.
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