A tunable and program-erasable capacitor on Si with excellent tuning memory

Abstract

A novel tunable and program-erasable high-/spl kappa/ AlN MIS capacitor is demonstrated for the first time with excellent tuning memory, which is useful to tune the impedance mismatching and resonance frequency without always having a connected voltage bias circuit. A large C/sub max//C/sub min/ tunability of 12 is obtained due to the high-/spl kappa/ AlN dielectric with high 5 /spl mu/F//spl mu/m/sup 2/ capacitance density. Good tuning memory is evidenced from the small V/sub th/ variation after program or erase at +4 V or -4 V for 10,000 s and the potential of years long extrapolated memory time.