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2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers最新文献

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A 5.25 GHz SiGe bipolar power amplifier for IEEE 802.11a wireless LAN 用于IEEE 802.11a无线局域网的5.25 GHz SiGe双极功率放大器
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320684
W. Bakalski, K. Kitlinski, G. Donig, B. Kapfelsperger, W. Osterreicher, W. Auchter, R. Weigel, A. Scholtz
{"title":"A 5.25 GHz SiGe bipolar power amplifier for IEEE 802.11a wireless LAN","authors":"W. Bakalski, K. Kitlinski, G. Donig, B. Kapfelsperger, W. Osterreicher, W. Auchter, R. Weigel, A. Scholtz","doi":"10.1109/RFIC.2004.1320684","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320684","url":null,"abstract":"An integrated wireless LAN radio frequency power amplifier (PA) for 5.25 GHz has been realized in a 40 GHz-f/sub T/, 0.35 /spl mu/m-SiGe-bipolar technology. The single-ended 3-stage power amplifier uses on-chip inductors and a short on-chip stripline for the interstage matching. At 3.3 V supply voltage the OP1dB is 23.8 dBm, and a saturated output power of 25.9 dBm is achieved at 5.25 GHz. The PAE at the OP1dB is 24%. The small-signal gain is 27 dB.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134495652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
An image rejection down-converter for low-IF receivers in 130 nm CMOS 用于130nm CMOS低中频接收器的图像抑制下变频器
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320525
S. Fang, A. Bellaouar, S.T. Lee, D. Allstot
{"title":"An image rejection down-converter for low-IF receivers in 130 nm CMOS","authors":"S. Fang, A. Bellaouar, S.T. Lee, D. Allstot","doi":"10.1109/RFIC.2004.1320525","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320525","url":null,"abstract":"Implemented in 4.1 mm/sup 2/ in 130 nm CMOS, a dual-conversion image rejection down-converter applied to the WCDMA standard draws 13 mA from 1.8 V. Using an IF of 2.5 MHz, the WCDMA image rejection band is widened from between 0.58 MHz and 4.42 MHz to between 0.48 MHz and 5.2 MHz - a bandwidth ratio of 10.8 - to accommodate process, voltage, and temperature variations in high-volume production. Ten samples are measured and fully characterized: average image rejection ratio (IRR) is 46.6 dBc; gain is 12 dB; NF is 10.8 dB. Typical IRR is 44.8 dBc, 46.5 dBc, and 47.5 dBc at -20/spl deg/C, 25/spl deg/C, and 80/spl deg/C, respectively.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134618781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Integration of SAW RF Rx filter stacked on a transceiver chip in a QFN package 在QFN封装中，SAW RF Rx滤波器堆叠在收发器芯片上的集成
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320604
R.E. Jones, C. Ramiah, T. Kamgaing, S. Banerjee, Chi-Taou Tsai, H. Hughes, A. de Silva, J. Drye, C. Vaughan, R. Miglore, D. Penunuri, R. Lucero, D. Frear, M. Miller
{"title":"Integration of SAW RF Rx filter stacked on a transceiver chip in a QFN package","authors":"R.E. Jones, C. Ramiah, T. Kamgaing, S. Banerjee, Chi-Taou Tsai, H. Hughes, A. de Silva, J. Drye, C. Vaughan, R. Miglore, D. Penunuri, R. Lucero, D. Frear, M. Miller","doi":"10.1109/RFIC.2004.1320604","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320604","url":null,"abstract":"Enhanced integration of mobile phone components is driven by demands for reduced form factor and cost. Because SAW filters must be fabricated on piezoelectric substrates, they are difficult to monolithically integrate on semiconductor chips. Here we report on the integration of a compact wafer-scale packaged SAW filter stacked over a transceiver chip in a quad flat-pack no-lead (QFN) package. An integrated passive device interposer provided redistribution and matching. We demonstrated the successful integration of both EGSM and DCS filters in such modules. SAW compact models based on the coupling of modes model were developed to facilitate system design.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133339717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A low-noise, and high-gain double-balanced mixer for 77 GHz automotive radar front-ends in SiGe bipolar technology 采用SiGe双极技术的77 GHz汽车雷达前端低噪声、高增益双平衡混频器
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320521
W. Perndl, H. Knapp, M. Wurzer, K. Aufinger, T. Meister, T.F. Bock, W. Simburger, A. Scholtz
{"title":"A low-noise, and high-gain double-balanced mixer for 77 GHz automotive radar front-ends in SiGe bipolar technology","authors":"W. Perndl, H. Knapp, M. Wurzer, K. Aufinger, T. Meister, T.F. Bock, W. Simburger, A. Scholtz","doi":"10.1109/RFIC.2004.1320521","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320521","url":null,"abstract":"An active down-conversion mixer for automotive radar applications at 76 GHz to 81 GHz was realized in a 200 GHz f/sub T/ SiGe bipolar technology. A conversion gain of more than 24 dB and a single-sideband noise figure of less than 14 dB is achieved. The 1 dB output compression point is -4 dBm. The power consumption is 300 mW at -5 V supply voltage.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"199 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122679213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 59
A high performance silicon bipolar monolithic RF linear power amplifier for W-LAN IEEE 802.11g applications 一种高性能硅双极单片射频线性功率放大器，适用于W-LAN IEEE 802.11g应用
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320532
A. Scuderi, D. Cristaudo, F. Carrara, G. Palmisano
{"title":"A high performance silicon bipolar monolithic RF linear power amplifier for W-LAN IEEE 802.11g applications","authors":"A. Scuderi, D. Cristaudo, F. Carrara, G. Palmisano","doi":"10.1109/RFIC.2004.1320532","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320532","url":null,"abstract":"A monolithic 2.5 GHz linear power amplifier for W-LAN IEEE 802.11g applications was integrated using a low cost 22 GHz f/sub T/ silicon bipolar process. The three-stage power amplifier exhibits a 26 dBm output 1 dB compression point, 30 dB power gain, and 52% maximum power-added efficiency, while using a low quiescent current, of 40 mA. Thanks to an optimized linearization technique, the power amplifier is able to comply with the stringent error vector magnitude requirement of the standard up to a 21.5 dBm output power level, with a 32% power-added efficiency. The power amplifier includes advanced bias functionalities and a fully integrated average channel power detector.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128608112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Improved modeling accuracy of thick metal passive SiGe/BiCMOS components for UWB using ADS momentum 利用ADS动量提高了超宽带厚金属被动SiGe/BiCMOS元件的建模精度
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320653
Y. Tretiakov, R. Groves, J. Rascoe, C. Mathis, B. Foley
{"title":"Improved modeling accuracy of thick metal passive SiGe/BiCMOS components for UWB using ADS momentum","authors":"Y. Tretiakov, R. Groves, J. Rascoe, C. Mathis, B. Foley","doi":"10.1109/RFIC.2004.1320653","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320653","url":null,"abstract":"This paper demonstrates the use of ADS Momentum to model spiral and straight line inductors for ultra wide band (UWB) applications over a silicon substrate. The main focus is on the improvements in the most recent version of the Advanced-Design System (ADS 2003C), which employs a new algorithm to model metal thickness. Results for two different inductor topologies show the increased accuracy of using a thick metal approach, versus that of sheet conductors, when compared to measured test site data.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128642450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Large-signal millimeter-wave CMOS modeling with BSIM3 基于BSIM3的大信号毫米波CMOS建模
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320559
S. Emami, C. Doan, A. Niknejad, R. Brodersen
{"title":"Large-signal millimeter-wave CMOS modeling with BSIM3","authors":"S. Emami, C. Doan, A. Niknejad, R. Brodersen","doi":"10.1109/RFIC.2004.1320559","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320559","url":null,"abstract":"A large-signal modeling methodology based upon a modified BSIM3v3 transistor model is presented which targets MM-wave CMOS applications. The effect of parasitics on the high-frequency operation of CMOS transistors is discussed, and a standard intrinsic BSIM3v3 model card is augmented with lumped elements to model these effects. Core BSIM parameters are extracted to match the measured DC I-V curves of a fabricated common-source NMOS transistor. Measured S-parameters are used to extract external parasitic component values to obtain a bias-dependent small-signal MM-wave frequency fit up to 65 GHz. The large-signal MM-wave accuracy of the model is verified by measuring the output harmonics power under large-signal excitation. Comparisons of measurements with the simulations show good agreement up to 60 GHz.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128698740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 46
Reprogrammable, wide tuning range 1.6 GHz CMOS VCO with low phase noise variation 可重新编程，宽调谐范围1.6 GHz CMOS压控振荡器低相位噪声变化
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320659
T. Papalias, T. Lee, A. Hajimiri, R. Dutton, T. Lee
{"title":"Reprogrammable, wide tuning range 1.6 GHz CMOS VCO with low phase noise variation","authors":"T. Papalias, T. Lee, A. Hajimiri, R. Dutton, T. Lee","doi":"10.1109/RFIC.2004.1320659","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320659","url":null,"abstract":"It is difficult to obtain simultaneously a large tuning range, low phase noise, and small phase noise variation, particularly while accommodating manufacturing and packaging tolerances. This work describes the first use of native EPROM devices (available in every standard CMOS technology) and switched reactances to relax these tradeoffs. In addition to permitting post-packaging compensation for manufacturing variations, the inherent reprogrammability of these cells also enables the rapid prototyping and optional reconfiguration of RF and mixed-signal systems. This technology allows the realization of a fully-integrated oscillator in 0.25 μm CMOS with a phase noise variation of under 10 dB (compared with 40 dB variation in a conventional implementation) over a 1.25 GHz to 1.92 GHz (42%) tuning range. The oscillator consumes 23 mW from a 3 V supply while exhibiting a phase noise of better than -93dBc/Hz at 100 kHz offset from a nominal 1.58 GHz center frequency.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129841182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low-power LC-VCO using integrated MEMS passives 采用集成MEMS无源的低功耗LC-VCO
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320687
V. Saraf, D. Ramachandran, A. Oz, G. Fedder, T. Mukherjee
{"title":"Low-power LC-VCO using integrated MEMS passives","authors":"V. Saraf, D. Ramachandran, A. Oz, G. Fedder, T. Mukherjee","doi":"10.1109/RFIC.2004.1320687","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320687","url":null,"abstract":"Low power RF operation is often limited by the poor quality factor of the passives available in silicon-based processes. This paper reports on an LC-tank VCO, incorporating micromachined inductors and capacitors, for low power operation, without sacrificing performance. Only 2.75 mW of power is needed to achieve -122 dB/Hz phase noise at 1 MHz from a 2.84 GHz carrier.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128115313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
A 45% PAE /18mA quiescent current CDMA PAM with a dynamic bias control circuit [power amplifier module] 带动态偏置控制电路的45% PAE /18mA静态电流CDMA PAM[功率放大器模块]
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320623
Youngwoon Kim, Ki-Chon Han, Seok-Yong Hong, Jin-ho Shin
{"title":"A 45% PAE /18mA quiescent current CDMA PAM with a dynamic bias control circuit [power amplifier module]","authors":"Youngwoon Kim, Ki-Chon Han, Seok-Yong Hong, Jin-ho Shin","doi":"10.1109/RFIC.2004.1320623","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320623","url":null,"abstract":"Based on an analog-gain control bias circuit (AGBC), a dynamic and fixed bias-controlled InGaP/GaAs HBT MMIC power amplifier module (PAM) is designed for code-division multiple-access (CDMA) and advanced mobile-phone service (AMPS) handset applications. The proposed AGBC effectively improves the power-added efficiency (PAE) of a power amplifier (PA) over a wide range of output power while satisfying the CDMA/AMPS linearity requirements. The PA gain slope with respect to AGBC mode-control voltage is about 12 dB/V. The measured average current of this AGBC PA is reduced by 64% compared to a standard PA. The AGBC PA exhibits a 28 dB power gain, a 45% PAE, and a -49 dBc adjacent channel power ratio (ACPR) at 28 dBm output power with a fixed mode-control voltage.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126731944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
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