可重新编程,宽调谐范围1.6 GHz CMOS压控振荡器低相位噪声变化

T. Papalias, T. Lee, A. Hajimiri, R. Dutton, T. Lee
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引用次数: 1

摘要

很难同时获得大调谐范围、低相位噪声和小相位噪声变化,特别是在适应制造和包装公差的情况下。这项工作描述了原生EPROM器件(可用于每种标准CMOS技术)和开关电抗的首次使用,以减轻这些权衡。除了允许对制造变化进行包装后补偿外,这些单元固有的可重新编程性也使射频和混合信号系统的快速原型和可选重新配置成为可能。该技术允许在0.25 μm CMOS中实现完全集成的振荡器,在1.25 GHz至1.92 GHz(42%)调谐范围内,相位噪声变化小于10 dB(传统实现为40 dB)。该振荡器从3 V电源消耗23 mW,同时在标称1.58 GHz中心频率的100 kHz偏移时显示出优于-93dBc/Hz的相位噪声。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reprogrammable, wide tuning range 1.6 GHz CMOS VCO with low phase noise variation
It is difficult to obtain simultaneously a large tuning range, low phase noise, and small phase noise variation, particularly while accommodating manufacturing and packaging tolerances. This work describes the first use of native EPROM devices (available in every standard CMOS technology) and switched reactances to relax these tradeoffs. In addition to permitting post-packaging compensation for manufacturing variations, the inherent reprogrammability of these cells also enables the rapid prototyping and optional reconfiguration of RF and mixed-signal systems. This technology allows the realization of a fully-integrated oscillator in 0.25 μm CMOS with a phase noise variation of under 10 dB (compared with 40 dB variation in a conventional implementation) over a 1.25 GHz to 1.92 GHz (42%) tuning range. The oscillator consumes 23 mW from a 3 V supply while exhibiting a phase noise of better than -93dBc/Hz at 100 kHz offset from a nominal 1.58 GHz center frequency.
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