A 5.25 GHz SiGe bipolar power amplifier for IEEE 802.11a wireless LAN

2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI:10.1109/RFIC.2004.1320684

W. Bakalski, K. Kitlinski, G. Donig, B. Kapfelsperger, W. Osterreicher, W. Auchter, R. Weigel, A. Scholtz

引用次数: 10

Abstract

An integrated wireless LAN radio frequency power amplifier (PA) for 5.25 GHz has been realized in a 40 GHz-f/sub T/, 0.35 /spl mu/m-SiGe-bipolar technology. The single-ended 3-stage power amplifier uses on-chip inductors and a short on-chip stripline for the interstage matching. At 3.3 V supply voltage the OP1dB is 23.8 dBm, and a saturated output power of 25.9 dBm is achieved at 5.25 GHz. The PAE at the OP1dB is 24%. The small-signal gain is 27 dB.

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用于IEEE 802.11a无线局域网的5.25 GHz SiGe双极功率放大器

采用40 GHz-f/sub /， 0.35 /spl mu/m- sige双极技术，实现了5.25 GHz的集成无线局域网射频功率放大器。单端3级功率放大器采用片上电感和片上短带状线进行级间匹配。在3.3 V电源电压下，OP1dB为23.8 dBm，在5.25 GHz下可实现25.9 dBm的饱和输出功率。OP1dB的PAE为24%。小信号增益为27db。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers

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