An image rejection down-converter for low-IF receivers in 130 nm CMOS

S. Fang, A. Bellaouar, S.T. Lee, D. Allstot
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引用次数: 4

Abstract

Implemented in 4.1 mm/sup 2/ in 130 nm CMOS, a dual-conversion image rejection down-converter applied to the WCDMA standard draws 13 mA from 1.8 V. Using an IF of 2.5 MHz, the WCDMA image rejection band is widened from between 0.58 MHz and 4.42 MHz to between 0.48 MHz and 5.2 MHz - a bandwidth ratio of 10.8 - to accommodate process, voltage, and temperature variations in high-volume production. Ten samples are measured and fully characterized: average image rejection ratio (IRR) is 46.6 dBc; gain is 12 dB; NF is 10.8 dB. Typical IRR is 44.8 dBc, 46.5 dBc, and 47.5 dBc at -20/spl deg/C, 25/spl deg/C, and 80/spl deg/C, respectively.
用于130nm CMOS低中频接收器的图像抑制下变频器
在4.1 mm/sup / 130 nm CMOS中实现,应用于WCDMA标准的双转换图像抑制下变频器从1.8 V输出13 mA。使用2.5 MHz的中频,WCDMA图像抑制频带从0.58 MHz到4.42 MHz之间扩大到0.48 MHz到5.2 MHz之间——带宽比为10.8——以适应大批量生产中的工艺、电压和温度变化。对10个样品进行了测量和充分表征:平均图像抑制比(IRR)为46.6 dBc;增益为12db;NF为10.8 dB。典型的IRR分别为-20、25和80℃时的44.8 dBc、46.5 dBc和47.5 dBc。
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