{"title":"具有数据调制校正环路的低功耗低相位噪声3.9GHz SiGe压控振荡器","authors":"M. Mostafa, S. Tuncer, G. Luff","doi":"10.1109/RFIC.2004.1320594","DOIUrl":null,"url":null,"abstract":"A 3.9 GHz LC VCO is fabricated using a 0.35 /spl mu/m SiGe BiCMOS process. The VCO is modulated through a modulation port in transmit mode. The VCO utilizes a modulation correction loop to compensate the modulation deviation due to the variation in the tuning circuit. The VCO measured phase noise is -140 dBc at 8 MHz offset, while draining 4 mA from a 2.5 V regulated supply. A 25% tuning range was also measured.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Low power low phase noise 3.9GHz SiGe VCO with data modulation correction loop\",\"authors\":\"M. Mostafa, S. Tuncer, G. Luff\",\"doi\":\"10.1109/RFIC.2004.1320594\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 3.9 GHz LC VCO is fabricated using a 0.35 /spl mu/m SiGe BiCMOS process. The VCO is modulated through a modulation port in transmit mode. The VCO utilizes a modulation correction loop to compensate the modulation deviation due to the variation in the tuning circuit. The VCO measured phase noise is -140 dBc at 8 MHz offset, while draining 4 mA from a 2.5 V regulated supply. A 25% tuning range was also measured.\",\"PeriodicalId\":140604,\"journal\":{\"name\":\"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2004.1320594\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2004.1320594","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low power low phase noise 3.9GHz SiGe VCO with data modulation correction loop
A 3.9 GHz LC VCO is fabricated using a 0.35 /spl mu/m SiGe BiCMOS process. The VCO is modulated through a modulation port in transmit mode. The VCO utilizes a modulation correction loop to compensate the modulation deviation due to the variation in the tuning circuit. The VCO measured phase noise is -140 dBc at 8 MHz offset, while draining 4 mA from a 2.5 V regulated supply. A 25% tuning range was also measured.
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