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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)最新文献

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Effect of thermal annealing on emission characteristics of nano electron source fabricated using beam assisted process 热退火对束辅助工艺制备纳米电子源发射特性的影响
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1116/1.1884117
K. Murakami, N. Yamasaki, S. Abo, F. Wakaya, M. Takai
{"title":"Effect of thermal annealing on emission characteristics of nano electron source fabricated using beam assisted process","authors":"K. Murakami, N. Yamasaki, S. Abo, F. Wakaya, M. Takai","doi":"10.1116/1.1884117","DOIUrl":"https://doi.org/10.1116/1.1884117","url":null,"abstract":"In this study, the thermal annealing effects on a single field emitter from the view point of the leakage current between the gate and cathode were investigated. The emission efficiency and percentage of working nano electron sources fabricated beam assisted processes were improved by thermal annealing. Thus the post annealing after beam-assisted processes is effective in reducing leakage current in nano electron sources.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114402361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Influence of gas atmosphere during laser surface treatment of CNT cathode 气体气氛对碳纳米管阴极激光表面处理的影响
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1116/1.1868698
W. Rochanachirapar, K. Murakami, N. Yamasaki, S. Abo, F. Wakaya, M. Takai, A. Hosono, S. Okuda
{"title":"Influence of gas atmosphere during laser surface treatment of CNT cathode","authors":"W. Rochanachirapar, K. Murakami, N. Yamasaki, S. Abo, F. Wakaya, M. Takai, A. Hosono, S. Okuda","doi":"10.1116/1.1868698","DOIUrl":"https://doi.org/10.1116/1.1868698","url":null,"abstract":"The I-V characteristics of carbon nanotube (CNT) cathodes after laser irradiation in air, N/sub 2/ and O/sub 2/ atmospheres have been compared to investigate the influence of each component of air. The I-V characteristic of CNT cathodes irradiated in O/sub 2/ was drastically improved, while there was almost no improvement in I-V characteristics irradiated in N/sub 2/. The O/sub 2/ pressure dependence during laser irradiation to CNT cathodes was also examined. The emission current density at an applied field of 6.6 V//spl mu/m was increased by a factor of 200 for laser irradiation in air. The emission current was enhanced by a factor of 400 for laser irradiation in 10/sup 5/ Pa of O/sub 2/ and the number of emission sites was drastically increased. The emission current density increased with an increase in pressure. The mechanism for drastic improvement in electron emission by UV laser irradiation is via laser-induced oxidation.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130898745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Experimental investigations for micro-fabricated folded-waveguide traveling-wave tube oscillators 微加工折叠波导行波管振荡器的实验研究
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354928
S.T. Han, J. So, K. Jang, Y. Shin, S. Jeon, J.H. Kim, S.S. Chang, N. Ryskin, G. Park
{"title":"Experimental investigations for micro-fabricated folded-waveguide traveling-wave tube oscillators","authors":"S.T. Han, J. So, K. Jang, Y. Shin, S. Jeon, J.H. Kim, S.S. Chang, N. Ryskin, G. Park","doi":"10.1109/IVNC.2004.1354928","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354928","url":null,"abstract":"Vacuum tube (folded-waveguide traveling-wave tube oscillator) fabricated by LIGA (deep X-ray lithography: Lithographic, Galvanoformung, Abformung; German acronym) process was successfully developed for the first time.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131834368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Emission statistics for Si and HfC/Si emitter arrays after gas exposure 气体暴露后Si和HfC/Si发射极阵列的发射统计
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354939
D. Nicolaescu, M. Nagao, T. Sato, V. Filip, S. Kanemaru, J. Itoh
{"title":"Emission statistics for Si and HfC/Si emitter arrays after gas exposure","authors":"D. Nicolaescu, M. Nagao, T. Sato, V. Filip, S. Kanemaru, J. Itoh","doi":"10.1109/IVNC.2004.1354939","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354939","url":null,"abstract":"Test arrays of gated Si emitters with N/sub tips/=100 tips have been fabricated. A HfC coating layer was deposited on the tips, showing effectiveness in lowering the operational voltage and improving the uniformity of the array emission. The Si and Si/HfC emitter arrays were measured in high vacuum conditions and after being subject to Ar and O/sub 2/ residual gases with partial pressures in the range 10/sup -4/ to 10/sup -6/ Pa, the evolution in time of the emission properties being recorded. The influence of residual gases on the field emission (FE) properties has been comparatively characterized through model parameter extraction.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122199170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Emission limited electrostatic atomization and the fine structure constant 发射限制静电雾化和精细结构常数
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1116/1.1990123
A. J. Kelly
{"title":"Emission limited electrostatic atomization and the fine structure constant","authors":"A. J. Kelly","doi":"10.1116/1.1990123","DOIUrl":"https://doi.org/10.1116/1.1990123","url":null,"abstract":"Quadropole mass spectrometer measurements are obtained for charged Octoil sprays, at a droplet radius of 0.83 /spl mu/m. Data are obtained for both emission limit and Rayleigh limit regime. The data revealed that operation in the emission limited regime is a function of inverse relative dielectric constant, coupling parameter r/sub s/, and the inverse fine structure constant f. The values r/sub s/ and f and their ratio (r/sub s//f) involve Planck's constant, indicating that emission limited spraying is controlled by quantum mechanical processes. The relationship between the energy per surface charge with the droplet diameter of Octoil is also shown.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125118151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Calculations concerning the electron transit time for an ideal cylindrical vacuum microelectronics diode 理想圆柱形真空微电子二极管电子传递时间的计算
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354922
B.X. Chen, G.Y. Liu, S. Xia, Y. Ding, H.Y. Li, J.S. Wu, Y.J. Lu
{"title":"Calculations concerning the electron transit time for an ideal cylindrical vacuum microelectronics diode","authors":"B.X. Chen, G.Y. Liu, S. Xia, Y. Ding, H.Y. Li, J.S. Wu, Y.J. Lu","doi":"10.1109/IVNC.2004.1354922","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354922","url":null,"abstract":"In this paper, the formulae of the potential distribution and the formulae of the electron transit time were derived mathematically for an ideal cylindrical vacuum microelectronics diode by using of the Laplace equation and the basic definition. By using the formulae, an idea about an equivalent vacuum microelectronics diode was introduced and the electron transit time of an ideal cylindrical vacuum microelectronics (IC-VME) triode was further estimated.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121943062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effect of conductive filaments on the electron emission properties in cathodes 导电细丝对阴极电子发射特性的影响
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354906
C. Poa, S. Silva
{"title":"Effect of conductive filaments on the electron emission properties in cathodes","authors":"C. Poa, S. Silva","doi":"10.1109/IVNC.2004.1354906","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354906","url":null,"abstract":"In this article, the modeling performed using Silvaco, Atlas device simulation was reported, where a new kind of enhancement mechanism within the FE process in hydrogenated amorphous silicon (a-Si:H) was proposed. This model is equally applicable to all disordered and nano-crystalline materials. In particular, internal field enhancement where a conductive region is embedded in an insulating matrix. The simulation setup consists of a 0.1 /spl mu/m thick a-Si:H film on a highly doped silicon substrate and a vacuum gap of 0.5 /spl mu/m for the unmodified control sample. The set-up also shows that a conductive filament of 10 nm diameter is incorporated into the bulk a-Si:H thin film.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127189789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The effect of the high and low activation temperature on the conduction of thermionic oxide cathodes for CRT applications 高活化温度和低活化温度对阴极射线管热离子氧化物阴极传导的影响
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354891
A. Hashim, A. Ray, D. Barratt, A.K. Hassan
{"title":"The effect of the high and low activation temperature on the conduction of thermionic oxide cathodes for CRT applications","authors":"A. Hashim, A. Ray, D. Barratt, A.K. Hassan","doi":"10.1109/IVNC.2004.1354891","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354891","url":null,"abstract":"The influence of the activation time and temperature on electrical properties of a new type of cathodes was investigated. Electrical results were interpreted in terms of the changes in the surface morphology and composition consequent upon the activation process.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121321268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical and electrical studies of a single Spindt-type field emitter 单个spindt型场发射器的光学和电学研究
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354958
Y. Désières, P. Nicolas, F. Sermet, F. Geffraye, S. Gidon
{"title":"Optical and electrical studies of a single Spindt-type field emitter","authors":"Y. Désières, P. Nicolas, F. Sermet, F. Geffraye, S. Gidon","doi":"10.1109/IVNC.2004.1354958","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354958","url":null,"abstract":"In this study, the numerical results obtained on a single Molybdenum Spindt-type emitter through electrostatic finite-element modelling, Fowler-Nordheim calculations, and electron trajectory simulation are presented. These simulation results are correlated to experimental results on electrical characteristics as well as beam intensity profile of a single tip. Electrostatic modelling of single Mo tips shows that the measured beam characteristics cannot be described without taking into account nanometric protuberances at the surface of the tip. Electric fields computed from a conical tip with a smooth surface are far lower than those which can explain the measured electronic emission. Protuberances at the apex of the tip provide a second level of amplification of the electric field and are clearly observed at the apex of the tip. Fowler-Nordheim standard theory emission parameters (emissive surface, mean electric field) extracted from current-voltage characterizations confirm that a multi-stage amplification mechanism fits with the observed current levels. The spatial distribution of the beam intensity is clearly the sum of the contributions of individual emission sites on the surface of the tip.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126777192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of field emission microscopic images originated from coherent scattering of multiwalled carbon nanotubes 多壁碳纳米管相干散射场发射显微图像的研究
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354914
P. Wu, S. Deng, Jun Chen, J. She, N. Xu
{"title":"Study of field emission microscopic images originated from coherent scattering of multiwalled carbon nanotubes","authors":"P. Wu, S. Deng, Jun Chen, J. She, N. Xu","doi":"10.1109/IVNC.2004.1354914","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354914","url":null,"abstract":"In this paper, the field emission images of multiwalled carbon nanotubes (MWCNTs) was studied using field emission microscopy (FEM). The formation of observed images by electron diffraction theory was also explained in this study.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114979275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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