{"title":"Effect of material properties on low-energy electron transmission in thin CVD diamond films","authors":"J. Yater, A. Shih, J. Butler, D.C. Pehrsson","doi":"10.1109/IVNC.2004.1354993","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354993","url":null,"abstract":"The electron transport process in CVD diamond was investigated using electron transmission spectroscopy. Electrons were injected into thin diamond films using a 0-20 keV electron gun, and then the secondary electrons that were transmitted through the films were detected and analyzed. In particular, the intensity and energy distribution of the transmitted electrons were measured as a function of the incident beam parameters (E/sub 0/, I/sub 0/) and analyzed using Monte Carlo simulations. Electron transmission data is measured from three CVD diamond films having similar thickness (/spl sim/ 2 /spl mu/m) but different bulk properties (i.e. B concentration, amorphic C content). Measurements are also taken from two CVD diamond films of different thickness (/spl sim/ 0.15 and 4 /spl mu/m). In the conduction-band transport regime, the escape depth (D/sub esc/) was determined. In general, D/sub esc/ was sensitive to the amorphic C content and grain boundary density, but not to the B concentration. The B concentration more strongly affected the transmission yield. The transmission yield was also affected by the surface properties of the film. It can be concluded that the film should be as thin as possible to achieve the highest yield.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129010448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P.A. Encarnacio, H. Goldberg, C. Deline, B. Gilchrist, J.L. Van Noord, R. Clarke
{"title":"Field emission of nanostructured boron nitride thin films in the presence of residual gases","authors":"P.A. Encarnacio, H. Goldberg, C. Deline, B. Gilchrist, J.L. Van Noord, R. Clarke","doi":"10.1109/IVNC.2004.1354923","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354923","url":null,"abstract":"In this paper, field emission was measured in varying atmospheres of different gases, from an on-going study of thin films of polycrystalline boron nitride (BN). The initial results indicate that the nanostructured BN surface exhibit robust emission characteristics in the presence of residual gases such as oxygen, xenon, water vapor, and nitrogen. Also, no permanent effect on the emission characteristics was observed from the exposure of the films to the gas.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"85 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120942687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electron emission from boron nitride films deposited on patterned substrates","authors":"H. Shima, S. Funakawa, C. Kimura, T. Sugino","doi":"10.1109/IVNC.2004.1355009","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1355009","url":null,"abstract":"In this paper field emission characteristics are investigated for the BN nanofilm deposited on the patterned substrate which leads to an increase of the field enhancement factor. A reduction in the threshold electric field and an increase of the emission site are demonstrated. Uniformity of the electron emission is significantly improved.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128512935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electron field emission property of boron doping nano-crystalline diamond","authors":"Y.C. Lee, S. Lin,, J.H. Huang, C. Chia, I. Lin","doi":"10.1109/IVNC.2004.1354932","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354932","url":null,"abstract":"The effects of boron doping on the nucleation behavior and the characteristics of nano-crystalline diamond (NCD) films were investigated. NCD films were prepared by microwave plasma enhanced chemical vapor deposition and were grown on mirror-polished p-type Si(100) substrate by bias enhanced growth technique. The morphologies and bonding structures of the films were characterized by field emission scanning electron microscopy, atomic force microscopy, Raman spectroscopy and X-ray diffraction. The increase in proportion of sp/sup 2/-bonded grain boundaries in finer grain NCD films is assumed to be the main modifying factor in the electron field emission of the film.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133724027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Weiss, P. H. Cutler, N. Miskovsky, M. Chung, N. Kumar
{"title":"Field emission enhanced semiconductor thermoelectric cooler","authors":"B. Weiss, P. H. Cutler, N. Miskovsky, M. Chung, N. Kumar","doi":"10.1109/IVNC.2004.1354964","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354964","url":null,"abstract":"Initial experimental results on the fabrication and measurements of a prototype field emission enhanced thermoelectric cooler device is reported. The device is based upon a silicon needle arrays fabricated by a focused ion beam technique. The device uses an electric field modulated current to transport heat from a cold source to a hot source via n- and p-type carriers. Cooling measurements are carried out in UHV system using both thermocouple and optical thermometry.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131241251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Influence of stress on the field emission properties of amorphous carbon thin films and multiwall carbon nanotube-polymer composites","authors":"C. Poa, R. Lacerda, S. Silva, F. C. Marques","doi":"10.1109/IVNC.2004.1354968","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354968","url":null,"abstract":"This work investigates the effects of stress on carbon-based materials during field emission. Amorphous carbon films containing nano-crystalline particles and MWNT composite thin films are subjected to external stress by mechanical bending. The samples were bent using an optical fibre placed in the middle of the sample. Field emission properties were measured using the probe technique.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"79 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123179261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Filip, D. Nicolaescu, H. Wong, M. Nagao, P. Chu
{"title":"Field electron emission through and from two-dimensional electron gas","authors":"V. Filip, D. Nicolaescu, H. Wong, M. Nagao, P. Chu","doi":"10.1109/IVNC.2004.1354924","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354924","url":null,"abstract":"In this paper, the role of the semiconductor interface layer electrons in the field emission current is discussed by considering a simplified model of the semiconductor and vacuum interfaces. Also, the extent to which the quasi-bound states are populated during the field emission process is outlined in this study.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122727787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Govyadinov, T. Novet, P. Benning, D. Pidwerbecki, S. Ramamoorthi, J. Smith, C. Otis, D. Neiman, J. Chen
{"title":"Novel flat MIS electron emitter","authors":"A. Govyadinov, T. Novet, P. Benning, D. Pidwerbecki, S. Ramamoorthi, J. Smith, C. Otis, D. Neiman, J. Chen","doi":"10.1109/IVNC.2004.1354980","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354980","url":null,"abstract":"The flat metal-insulator-semiconductor (MIS) electron emitter is a simple design allowing easy manufacture, and is relatively insensitive to environment conditions making operation possible in poor vacuum conditions. A stack of 5000 /spl Aring/ polysilicon/150 /spl Aring/ silicon oxide/50 /spl Aring/ gold deposited on n++ doped silicon showed the best performance. We have observed emission current densities as high as 2-10 A/cm/sup 2/ at efficiencies from 3-10%. The polysilicon serves a dual role. Bumps on the poly surface act as field-enhanced emission sites while the bulk of the film behaves as a ballast resistor that prevents run away emission from any one emission site. The thin gold layer self-assembles into a nano-mesh with >100 pores//spl mu/m/sup 2/ through which electrons escape. Emission theory, including energy distribution and angular divergence of the emitted beams, are discussed.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126186779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yang‐Doo Lee, H. Lee, S. Moon, H. Hwang, Jeung‐Hoon Park, J. Han, J. Yoo, Yun‐Hi Lee, S. Nahm, B. Ju
{"title":"Field emission properties of screen printed double-walled carbon nanotubes synthesized by thermal CVD","authors":"Yang‐Doo Lee, H. Lee, S. Moon, H. Hwang, Jeung‐Hoon Park, J. Han, J. Yoo, Yun‐Hi Lee, S. Nahm, B. Ju","doi":"10.1109/IVNC.2004.1354899","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354899","url":null,"abstract":"We analyzed the microstructure of double-walled carbon nanotubes (DWNTs) synthesized by chemical vapor deposition (CVD) method and investigated field emission of properties DWNTs screen printed. We fabricated 1-inch triode type CNTs flat lamp.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128699258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chun‐Gyoo Lee, Sang Jo Lee, E. Chi, Byung Gon Lee, S. Jeon, S. Ahn, S. Hong, S. Cho, D. Choe
{"title":"Low voltage driven carbon nanotube field emission cathode","authors":"Chun‐Gyoo Lee, Sang Jo Lee, E. Chi, Byung Gon Lee, S. Jeon, S. Ahn, S. Hong, S. Cho, D. Choe","doi":"10.1109/IVNC.2004.1354976","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354976","url":null,"abstract":"An under-gate CNT cathode structure was fabricated and characterized. The purpose of this work is to fabricate a cathode with micron-sized CNT-to-counter electrode gap, d/sub G/. Scanning electron microscopy was used to characterize the fabricated cathode. Electrical measurements were made in a vacuum chamber. It was found that cathode-to-gate voltage decreases with decreasing d/sub G/. It was also observed that emitting layer made of high purity CNT powder offers higher performance in terms of emission site density.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127274001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}