通过和来自二维电子气体的场电子发射

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1109/IVNC.2004.1354924

V. Filip, D. Nicolaescu, H. Wong, M. Nagao, P. Chu

{"title":"通过和来自二维电子气体的场电子发射","authors":"V. Filip, D. Nicolaescu, H. Wong, M. Nagao, P. Chu","doi":"10.1109/IVNC.2004.1354924","DOIUrl":null,"url":null,"abstract":"In this paper, the role of the semiconductor interface layer electrons in the field emission current is discussed by considering a simplified model of the semiconductor and vacuum interfaces. Also, the extent to which the quasi-bound states are populated during the field emission process is outlined in this study.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Field electron emission through and from two-dimensional electron gas\",\"authors\":\"V. Filip, D. Nicolaescu, H. Wong, M. Nagao, P. Chu\",\"doi\":\"10.1109/IVNC.2004.1354924\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the role of the semiconductor interface layer electrons in the field emission current is discussed by considering a simplified model of the semiconductor and vacuum interfaces. Also, the extent to which the quasi-bound states are populated during the field emission process is outlined in this study.\",\"PeriodicalId\":137345,\"journal\":{\"name\":\"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVNC.2004.1354924\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVNC.2004.1354924","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文通过考虑半导体和真空界面的简化模型，讨论了半导体界面层电子在场发射电流中的作用。此外，本文还概述了在场发射过程中准束缚态填充的程度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Field electron emission through and from two-dimensional electron gas

In this paper, the role of the semiconductor interface layer electrons in the field emission current is discussed by considering a simplified model of the semiconductor and vacuum interfaces. Also, the extent to which the quasi-bound states are populated during the field emission process is outlined in this study.

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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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