Field electron emission through and from two-dimensional electron gas

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1109/IVNC.2004.1354924

V. Filip, D. Nicolaescu, H. Wong, M. Nagao, P. Chu

引用次数: 0

Abstract

In this paper, the role of the semiconductor interface layer electrons in the field emission current is discussed by considering a simplified model of the semiconductor and vacuum interfaces. Also, the extent to which the quasi-bound states are populated during the field emission process is outlined in this study.

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通过和来自二维电子气体的场电子发射

本文通过考虑半导体和真空界面的简化模型，讨论了半导体界面层电子在场发射电流中的作用。此外，本文还概述了在场发射过程中准束缚态填充的程度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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