硼掺杂纳米晶金刚石的电子场发射特性

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1109/IVNC.2004.1354932

Y.C. Lee, S. Lin,, J.H. Huang, C. Chia, I. Lin

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引用次数: 0

摘要

研究了硼掺杂对纳米金刚石(NCD)薄膜成核行为和特性的影响。采用微波等离子体增强化学气相沉积技术制备了NCD薄膜，并采用偏置增强生长技术在镜面抛光的p型Si(100)衬底上生长。采用场发射扫描电镜、原子力显微镜、拉曼光谱和x射线衍射对膜的形貌和键合结构进行了表征。假设细晶NCD薄膜中sp/sup - 2键晶界比例的增加是影响薄膜电子场发射的主要因素。

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Electron field emission property of boron doping nano-crystalline diamond

The effects of boron doping on the nucleation behavior and the characteristics of nano-crystalline diamond (NCD) films were investigated. NCD films were prepared by microwave plasma enhanced chemical vapor deposition and were grown on mirror-polished p-type Si(100) substrate by bias enhanced growth technique. The morphologies and bonding structures of the films were characterized by field emission scanning electron microscopy, atomic force microscopy, Raman spectroscopy and X-ray diffraction. The increase in proportion of sp/sup 2/-bonded grain boundaries in finer grain NCD films is assumed to be the main modifying factor in the electron field emission of the film.

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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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