热退火对束辅助工艺制备纳米电子源发射特性的影响

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1116/1.1884117

K. Murakami, N. Yamasaki, S. Abo, F. Wakaya, M. Takai

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引用次数: 8

摘要

本文从栅极和阴极之间漏电流的角度研究了单场发射体的热退火效应。采用热退火技术提高了束流辅助工艺制备的纳米电子源的发射效率和工作率。因此，束辅助工艺后的后退火对于减小纳米电子源的泄漏电流是有效的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of thermal annealing on emission characteristics of nano electron source fabricated using beam assisted process

In this study, the thermal annealing effects on a single field emitter from the view point of the leakage current between the gate and cathode were investigated. The emission efficiency and percentage of working nano electron sources fabricated beam assisted processes were improved by thermal annealing. Thus the post annealing after beam-assisted processes is effective in reducing leakage current in nano electron sources.

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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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