Calculations concerning the electron transit time for an ideal cylindrical vacuum microelectronics diode

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1109/IVNC.2004.1354922

B.X. Chen, G.Y. Liu, S. Xia, Y. Ding, H.Y. Li, J.S. Wu, Y.J. Lu

引用次数: 2

Abstract

In this paper, the formulae of the potential distribution and the formulae of the electron transit time were derived mathematically for an ideal cylindrical vacuum microelectronics diode by using of the Laplace equation and the basic definition. By using the formulae, an idea about an equivalent vacuum microelectronics diode was introduced and the electron transit time of an ideal cylindrical vacuum microelectronics (IC-VME) triode was further estimated.

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理想圆柱形真空微电子二极管电子传递时间的计算

本文利用拉普拉斯方程和基本定义，从数学上推导了理想圆柱形真空微电子二极管的势分布公式和电子过行时间公式。利用该公式，引入了等效真空微电子二极管的概念，并进一步估计了理想圆柱形真空微电子三极管的电子传递时间。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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