气体暴露后Si和HfC/Si发射极阵列的发射统计

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1109/IVNC.2004.1354939

D. Nicolaescu, M. Nagao, T. Sato, V. Filip, S. Kanemaru, J. Itoh

{"title":"气体暴露后Si和HfC/Si发射极阵列的发射统计","authors":"D. Nicolaescu, M. Nagao, T. Sato, V. Filip, S. Kanemaru, J. Itoh","doi":"10.1109/IVNC.2004.1354939","DOIUrl":null,"url":null,"abstract":"Test arrays of gated Si emitters with N/sub tips/=100 tips have been fabricated. A HfC coating layer was deposited on the tips, showing effectiveness in lowering the operational voltage and improving the uniformity of the array emission. The Si and Si/HfC emitter arrays were measured in high vacuum conditions and after being subject to Ar and O/sub 2/ residual gases with partial pressures in the range 10/sup -4/ to 10/sup -6/ Pa, the evolution in time of the emission properties being recorded. The influence of residual gases on the field emission (FE) properties has been comparatively characterized through model parameter extraction.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Emission statistics for Si and HfC/Si emitter arrays after gas exposure\",\"authors\":\"D. Nicolaescu, M. Nagao, T. Sato, V. Filip, S. Kanemaru, J. Itoh\",\"doi\":\"10.1109/IVNC.2004.1354939\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Test arrays of gated Si emitters with N/sub tips/=100 tips have been fabricated. A HfC coating layer was deposited on the tips, showing effectiveness in lowering the operational voltage and improving the uniformity of the array emission. The Si and Si/HfC emitter arrays were measured in high vacuum conditions and after being subject to Ar and O/sub 2/ residual gases with partial pressures in the range 10/sup -4/ to 10/sup -6/ Pa, the evolution in time of the emission properties being recorded. The influence of residual gases on the field emission (FE) properties has been comparatively characterized through model parameter extraction.\",\"PeriodicalId\":137345,\"journal\":{\"name\":\"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVNC.2004.1354939\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVNC.2004.1354939","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

制作了N/sub尖端/=100尖端的门控硅发射体测试阵列。在尖端上沉积了一层HfC涂层，有效地降低了工作电压，提高了阵列发射的均匀性。在高真空条件下对Si和Si/HfC发射极阵列进行了测量，在分压范围为10/sup -4/ ~ 10/sup -6/ Pa的Ar和O/sub - 2/残余气体作用后，记录了发射特性的随时间变化。通过模型参数提取，比较表征了残余气体对场发射特性的影响。

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Emission statistics for Si and HfC/Si emitter arrays after gas exposure

Test arrays of gated Si emitters with N/sub tips/=100 tips have been fabricated. A HfC coating layer was deposited on the tips, showing effectiveness in lowering the operational voltage and improving the uniformity of the array emission. The Si and Si/HfC emitter arrays were measured in high vacuum conditions and after being subject to Ar and O/sub 2/ residual gases with partial pressures in the range 10/sup -4/ to 10/sup -6/ Pa, the evolution in time of the emission properties being recorded. The influence of residual gases on the field emission (FE) properties has been comparatively characterized through model parameter extraction.

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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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