2011 21st International Conference on Noise and Fluctuations最新文献_第8页

Noise and optical activities of local defects in solar cells pn junctions 太阳能电池pn结局部缺陷的噪声和光学活性

2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994355

P. Koktavy, R. Macků

引用次数: 4

Low-frequency noise in triple-gate n-channel bulk FinFETs 三栅n通道体finfet的低频噪声

2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994280

E. Simoen, M. Aoulaiche, N. Collaert, C. Claeys

引用次数: 9

Noise characterisation of transport properties in single wall carbon nanotube field-effect transistors 单壁碳纳米管场效应晶体管输运特性的噪声表征

2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994312

V. Sydoruk, M. Petrychuk, A. Ural, G. Bosman, A. Offenhausser, S. Vitusevich

引用次数: 0

Characterization of degradation process in white light nitride-based LEDs by low-frequency noise 利用低频噪声表征白光氮基led的降解过程

2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994366

B. Saulys, V. Palenskis, J. Matukas, S. Pralgauskaitė, Egle Tylaite

引用次数: 1

Uncertainties in the estimation of low frequency noise level extracted from noise spectral density measurements 从噪声谱密度测量中提取的低频噪声电平估计中的不确定性

2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994363

B. Guillet, Sheng Wu, B. Crețu, R. Talmat, H. Achour, C. Barone, S. Pagano, Eric Sassier, J. Routoure

引用次数: 6

Diagnostic tools for accurate reliability investigations of GaN devices 用于GaN器件准确可靠性调查的诊断工具

2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994367

J. Tartarin

{"title":"Diagnostic tools for accurate reliability investigations of GaN devices","authors":"J. Tartarin","doi":"10.1109/ICNF.2011.5994367","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994367","url":null,"abstract":"Intensive development of GaN-based HEMT devices has been largely pushed by their intrinsic capabilities for operation at high temperature under high voltage conditions, making the difference with the competitive technologies. However, a poor electrical reliability under high-electric-field operation is still hampering large-scale penetration of these technologies into the RF power market. From the early 2000, an increased number of works have addressed reliability issues. The first ones have been conducted on the basis of roadmaps issued from reliability investigations previously carried out on III–V and silicon based devices. These investigations have enlightened that several parameters such as surface passivation, processing techniques alternatives and piezoelectric effects severely impact device reliability. In order to get a deeper understanding of the correlation between physical and electrical events, we simultaneously report low frequency noise (LFN) measurements data (including separation of the different noise sources involved), and electrical measurements data (lag effects on drain and gate terminals, I-DLTS measurements, …) conducted on the same devices. The later investigations are appropriate in order to identify defects that are able to produce noise. Noise measurements versus temperature on virgin and stressed devices are reported for different GaN processes developed by a French industrial foundry. Lorentzian noise shapes are identified and activation energies are extracted from Arrhenius plots. Additionally, I-DLTS measurements are performed. Electric lag measurements on the gate and drain terminals are finally used in order to relate stress impact to the electrical integrity of the devices. The identification of failure mechanisms needs accurate statements, and the effectiveness of such a melting of different kind of experiments is demonstrated.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130158661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 16

Low frequency noise in organic solar cells 有机太阳能电池中的低频噪声

2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994389

Hi Katsu, Y. Kawasugi, R. Yamada, H. Tada

引用次数: 4

Current noise in stationary conditions in MgB2 thin films 静止条件下MgB2薄膜中的电流噪声

2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994383

C. Gandini, A. Masoero, V. Andreoli, E. Monticone

{"title":"Current noise in stationary conditions in MgB2 thin films","authors":"C. Gandini, A. Masoero, V. Andreoli, E. Monticone","doi":"10.1109/ICNF.2011.5994383","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994383","url":null,"abstract":"The present paper concerns the analysis of the current noise taken in stationary conditions at different stages of the transition process in MgB2 thin films. The specimen, during its transition, reaches an intermediate state characterized by resistive and superconductive regions. Except in the case where the specimen resistance is lower than about one tenth of its value at the end of the transition, both the amplitude and frequency behavior of the relative noise power spectra remain rigorously constant at different stages of the transition curve, until the transition is completed and the fully normal state is achieved [1]. A different picture appears at the beginning of the transition, where the specimen resistance increases slowly with the temperature, before reaching the steepest part of the transition curve. Contrarily to the previous case, now the specimen reaches a mixed state, and the noise is produced by depinning and motion of fluxoids. Actually the amplitude of the reduced noise power spectrum becomes very sensitive to both to the magnetic field and the specimen resistance, and is largely dominant when this resistance tends to zero.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116236276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High frequency noise in manufacturable carbon nanotube transistors 可制造碳纳米管晶体管中的高频噪声

2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994346

P. Sakalas, M. Schroter, M. Bolter, M. Claus, S. Mothes, D. Wang

引用次数: 14

Comparison of noise characteristics of GaAs and GaN Schottky diodes for millimeter and submillimeter applications 毫米波和亚毫米波应用中GaAs和GaN肖特基二极管的噪声特性比较

2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994274

D. Pardo, S. Pérez, J. Grajal, J. Mateos, T. González

引用次数: 0