单壁碳纳米管场效应晶体管输运特性的噪声表征

2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI:10.1109/ICNF.2011.5994312

V. Sydoruk, M. Petrychuk, A. Ural, G. Bosman, A. Offenhausser, S. Vitusevich

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引用次数: 0

摘要

本文报道了基于单根碳纳米管(CNT)的场效应晶体管(fet)的噪声光谱结果。记录的噪声谱使我们能够估计出具有最大跨导的工作点的载流子数。在较宽的温度范围内分析了洛伦兹形噪声分量。分析使我们能够找到碳纳米管-场效应管结构中陷阱的能量、位置和浓度。

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Noise characterisation of transport properties in single wall carbon nanotube field-effect transistors

We report results of noise spectroscopy of field-effect transistors (FETs) fabricated based on individual carbon nanotube (CNT) using back-gate topography. The registered noise spectra allow us to estimate the numbers of carriers in working point with maximal transconductance. Lorentzian-shape noise components were analyzed in wide temperature range. The analysis enables us to find the energy, position and concentration of traps in the CNT-FET structures.

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2011 21st International Conference on Noise and Fluctuations

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