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2011 21st International Conference on Noise and Fluctuations最新文献

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Low-frequency noise and stress-induced degradation in LDMOS LDMOS的低频噪声和应力诱导降解
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994341
M. Mahmud, Z. Çelik-Butler, P. Hao, F. Hou, B. Amey, T. Khan, W. Huang
{"title":"Low-frequency noise and stress-induced degradation in LDMOS","authors":"M. Mahmud, Z. Çelik-Butler, P. Hao, F. Hou, B. Amey, T. Khan, W. Huang","doi":"10.1109/ICNF.2011.5994341","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994341","url":null,"abstract":"Low frequency noise (LFN) characteristics of high voltage double reduced-surface-field LDMOS with SiO2 as gate dielectric is investigated and the effect of DC stressing has been observed. It has been found that the LDMOS does not follow typical noise behavior of ordinary MOSFETs as extended drain attributes a significant role at higher gate overdrive voltages. Here, separation of the overall measured noise components to three distinct regions is proposed: the channel, the resistive region under the gate oxide and that under the field oxide layer. Induced and inherent noise components coming from the extended drain region under the gate and field oxides are separated from the channel noise by performing noise measurements in DNWell standalone resistors.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"191 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123072713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Low-frequency noise in graphene field-effect transistors 石墨烯场效应晶体管中的低频噪声
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994311
S. Rumyantsev, Guanxiong Liu, W. Stillman, V. Kachorovskii, M. Shur, A. A. Balandin
{"title":"Low-frequency noise in graphene field-effect transistors","authors":"S. Rumyantsev, Guanxiong Liu, W. Stillman, V. Kachorovskii, M. Shur, A. A. Balandin","doi":"10.1109/ICNF.2011.5994311","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994311","url":null,"abstract":"The low frequency noise has been studied in mechanically exfoliated single- and bilayer graphene deposited on Si/SiO2 substrates. Measurements were performed in 2- and 4-probe configuration schemes. The analysis of the gate voltage dependences of noise showed that noise in graphene transistors does not comply with the McWhorter model. Aging of graphene transistors due to exposure to ambient resulted in increased noise attributed to the decreasing mobility of graphene and increasing contact resistance. The model linking noise in graphene to the mobility fluctuations is discussed.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127377144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Poole frenkel currents and 1/f noise characteristics of high voltage MLCCs 高压mlcc的波峰电流和1/f噪声特性
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994364
M. Tacano, H. Ohya, N. Tanuma, J. Sikula
{"title":"Poole frenkel currents and 1/f noise characteristics of high voltage MLCCs","authors":"M. Tacano, H. Ohya, N. Tanuma, J. Sikula","doi":"10.1109/ICNF.2011.5994364","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994364","url":null,"abstract":"DC leakage currents of MLCC (Multi Layerd Ceramc Capacitor)s show the typical Poole Frenkel relationship between the normalized current log (I/V) and the normalized voltage V within the specified voltage across the device without any local breakdown characteristics, giving the PF constants and the barrier heights of the insulating BaTiO3 layers. The typical 1/f noise characteristics are also observed, and the normalized noise amplitudes are obtained as the function of the MLCC series resistance, noise amplitudes of which are found more than 60 dB larger than those of the metal resistors. Both the leakage current and 1/f noise amplitudes give time saving reliability information much faster than those of the conventional MTTF method. The emerging needs of the ecological vehicles or the two cycle motor inverter systems accelerate the development of the high voltage MLCCs sharing a large part of capacitor applications. Up to 80 % of the total capacitors are made now by the MLCC. The MTTF method is usually applied as the standard conventional reliability test for these capacitors. Both the leakage current and 1/f noise amplitudes give time saving reliability information much faster than those of the conventional MTTF method. The leakage current in MLCC can be explained by the Poole-Frenkel tunneling effect. The normalized current (I/V) is linearly dependent on SQRT(V), noise levels are 60 to 80 dB larger than those of the conventional carbon resistors, with typical 1/f characteristics, dependent on the lots and independent of the biasing voltage.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115330547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analytical assessment of orbital noise effects in ring oscillators 环形振荡器中轨道噪声效应的分析评价
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994333
F. Traversa, F. Bonani
{"title":"Analytical assessment of orbital noise effects in ring oscillators","authors":"F. Traversa, F. Bonani","doi":"10.1109/ICNF.2011.5994333","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994333","url":null,"abstract":"We present the study of phase, amplitude and phase-orbital correlation noise in an idealized ring oscillator. The results are based on the Floquet theory for fluctuation estimation in an autonomous circuit. The chosen structure allows for fully analytical calculations, thus providing closed form, albeit approximate, expressions of the complete noise spectrum. This complements recent results wherein the phase noise component only was calculated.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122581156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Stochastic resonance with group chase and escape 群体追逐和逃跑的随机共振
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994300
A. Kamimura, S. Matsumoto, T. Nogawa, N. Ito, T. Ohira
{"title":"Stochastic resonance with group chase and escape","authors":"A. Kamimura, S. Matsumoto, T. Nogawa, N. Ito, T. Ohira","doi":"10.1109/ICNF.2011.5994300","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994300","url":null,"abstract":"We describe a simple model developed under the new idea of one group chasing another called, “group chase and escape”. We will demonstrate that even a simple model can exhibit rather rich and complex behavior. In particular, we show that the appropriate level of fluctuation in each step of the process for chase and escape can minimize the time taken for the entire catch.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122481437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Evidence of charge carrier number fluctuations in InN thin films? InN薄膜中载流子数波动的证据?
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994375
G. R. Mutta, B. Guillet, L. Méchin, A. Vilalta‐Clemente, J. Grandal, M. Sánchez-García, Sara Martin, F. Calle, P. Ruterana, J. Routoure
{"title":"Evidence of charge carrier number fluctuations in InN thin films?","authors":"G. R. Mutta, B. Guillet, L. Méchin, A. Vilalta‐Clemente, J. Grandal, M. Sánchez-García, Sara Martin, F. Calle, P. Ruterana, J. Routoure","doi":"10.1109/ICNF.2011.5994375","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994375","url":null,"abstract":"Due to its small band-gap and its high mobility, InN is a promising material for a large number of key applications like band-gap engineering for high efficiency solar cells, light emitting diodes, and high speed devices. Unfortunately, it has been reported that this material exhibits strong surface charge accumulation which may depend on the type of surface. Current investigations are conducted in order to explain the mechanisms which govern such a behavior and to look for ways of avoiding it and/or finding applications that may use such an effect. In this framework, low frequency noise measurements have been performed at different temperatures on patterned MBE grown InN layers. The evolution of the 1/f noise level with temperature in the 77 K-300 K range is consistent with carrier number fluctuations thus indicating surface mechanisms: the surface charge accumulation is confirmed by the noise measurements.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116750806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Properties of neural noise in amblyopia 弱视中神经噪声的特性
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994360
J. M. Medina, J. Carvalho, S. Franco
{"title":"Properties of neural noise in amblyopia","authors":"J. M. Medina, J. Carvalho, S. Franco","doi":"10.1109/ICNF.2011.5994360","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994360","url":null,"abstract":"We have examined the characteristics of neural noise in amblyopia, a disorder that impairs binocular vision. Non-invasive methods based on signal-detection theory and psychophysics were used to measure threshold fluctuations in orientation processing, which is considered a main feature of cortical processing. Fluctuations were correlated and increase with the response size by power law scaling behavior. The scaling exponent in amblyopia was similar or lower than normal vision. Comparisons between observational conditions have revealed that the scaling exponent in normal binocular vision was lower than the monocular case. Surprisingly, the exponents in the amblyopic and fellow eye were lower than in amblyopic vision. The results conclude that amblyopia does not necessarily involve greater internal noise but an inverted trend.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128722398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low-frequency noise in a-Se based x-ray photoconductors a-Se基x射线光导体中的低频噪声
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994352
T. Meyer, R. Johanson, G. Belev, S. Kasap
{"title":"Low-frequency noise in a-Se based x-ray photoconductors","authors":"T. Meyer, R. Johanson, G. Belev, S. Kasap","doi":"10.1109/ICNF.2011.5994352","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994352","url":null,"abstract":"We report on the excess, low-frequency noise in pin-like amorphous selenium alloy structures that are used in direct-conversion x-ray imaging detectors. These are the first measurements of the noise power density spectrum in these structures under reverse bias. Of the two samples measured, one has a noise spectrum that fits well to a 1=fα power law with α near one. The 1=f noise is not atypical except for a nonlinear dependence on d.c. current at fields above 5 Vµm. The variance in correlated double sampling measurements of the noise signal is calculated and related to the 1=f noise spectrum. The other sample has a white noise spectrum down to 10−2 Hz. The white noise of the second sample is larger than the 1=f noise and is likely masking the 1=f noise over the measured frequency range. The origin of the white noise is not known.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128609994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Measurements of the third cumulant in quantum shot noise at high frequency 高频量子散粒噪声中第三累积量的测量
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994334
J. Gabelli, B. Reulet
{"title":"Measurements of the third cumulant in quantum shot noise at high frequency","authors":"J. Gabelli, B. Reulet","doi":"10.1109/ICNF.2011.5994334","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994334","url":null,"abstract":"We propose to measure the high frequency third cumulant of voltage quantum fluctuations across a tunnel junction in the high frequency regime ħω ≫ eV ≫ kBT. This quantity is obtained by correlating the fluctuations of the high frequency noise power with the low frequency part of the fluctuating voltage. In this regime, the high frequency voltage/current fluctuations are due to zero point motion of electrons. It has been predicted that the third cumulant of current fluctuations is simply given by e2I, independent of ω. Despite its classical look, this result expresses that the fluctuations of the square of the high frequency current due to vacuum fluctuations are correlated with the low frequency fluctuating current. It raises the problem of how to calculate high order correlators of a quantum signal for a given experimental setup.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130662033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Anomalous diffusion in the dynamics of X-ray emission of astrophysical objects 天体物理物体x射线发射动力学中的异常扩散
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994277
Y. Polyakov, J. Neilsen, S. Timashev
{"title":"Anomalous diffusion in the dynamics of X-ray emission of astrophysical objects","authors":"Y. Polyakov, J. Neilsen, S. Timashev","doi":"10.1109/ICNF.2011.5994277","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994277","url":null,"abstract":"We use the anomalous-diffusion interpolation and parameterization procedure developed within the framework of flicker-noise spectroscopy (FNS) to characterize the stochastic variability of X-ray emission from accreting black hole GRS 1915+105. Our analysis of the lightcurves with a sampling frequency of 16 Hz in soft and hard X-ray energy bands shows that the stochastic variability of soft-band lightcurves is mostly subdiffusive while the hard X-ray emission is characterized primarily by fractional Gaussian noise. The comparison of FNS parameters between the soft and hard energy bands (corresponding roughly to different X-ray emission mechanisms) implies that hard X-rays have more relative variability at higher frequencies and are characterized by shorter diffusion timescales than soft X-rays. We suggest that the differences in the stochastic variabilities may be attributed to changes in either the viscosity law in the accretion disk or the geometry of the accretion flow.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127682431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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