2011 21st International Conference on Noise and Fluctuations最新文献

{"title":"Gate voltage control of stochastic resonance in carbon nanotube field effect transistors","authors":"T. Kawahara, S. Yamaguchi, K. Maehashi, Y. Ohno, K. Matsumoto, Shin Mizutani","doi":"10.1109/ICNF.2011.5994344","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994344","url":null,"abstract":"On the recent developments in nano devices, carbon nanotube (CNT) is one of the candidates for next generation devices. For device applications, it might be the problem that CNTs show large noise because of large surface area. However, sometimes nonlinear systems have advantages in the working with noise. In stochastic resonance (SR), noise could enhance the working properties of devices. Therefore, we combined the noise CNT field effect transistor (FET) and the nonlinear CNT-FET as a test nonlinear system, and the sine wave amplification in the transistor with noise was measured. For the single wall CNTs, noise has the gate voltage (Vg) dependence with 1/ƒ type noise. We prepared several intensity of noise by the amplification and the gate voltage control between −4 V and −1 V for 1//ƒ noise that come from noise of CNT-FETs. Using this noise, we will discuss about the nonlinear response of CNT-FET under the controlled noise by the gate voltage.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121454106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bayesian information decoding by a cell","authors":"Tetsuya J. Kobayashi","doi":"10.1109/ICNF.2011.5994377","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994377","url":null,"abstract":"Information processing of externally introduced signals is a basic task of signal transduction pathways and genetic regulatory networks in a cell. Because of the presence of intrinsic and extrinsic noise inside and outside of a cell, such a pathway has to be robust to noise that undermines information contained in the signals. Even though molecular details of the pathways have been clarified experimentally, we still do not know what kind of intracellular reactions are relevant to the robust information processing to noise. In this work, I firstly derive an optimal information decoding dynamics by employing the theory of Bayesian decoding. Then, I demonstrate that this optimal decoding kinetics can be implemented by an auto-phosphorlation auto-dephosphorlation cycle (aPadP cycle). Dynamical properties of the aPadP cycle will also be revealed from the bifurcation viewpoint. Moreover, I will investigate efficiency of information decoding by several intercellular reactions including the aPadP cycle.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"75 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130924060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of 1/f and generation-recombination noise in four gate transistors","authors":"A. Luque Rodriguez, J. J. Jiménez Tejada, M. Marun Gonzalez, M. Reverto Planes, P. López Varo, A. Godoy","doi":"10.1109/ICNF.2011.5994322","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994322","url":null,"abstract":"In this work, we study different noise sources that are present in four-gate field-effect-transistors (G4-FET). We present a model for the generation-recombination (g-r) noise due to traps located in the depletion regions and in the bulk, and for the 1/f noise due to traps in the top and bottom oxides. One of the main advantages of this structure is that the position and size of the conduction channel can be controlled by the application of adequate voltages to its gates (front and back MOS gates and two lateral JFET gates). However, the channel is also prone to be affected by the noise sources distributed throughout the device. Thus, the current noise power spectral density is a combination of all these noise sources. Experimental data showing such a combination are interpreted with our model.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133655142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theory of fluctuations in non-equilibrium electron—hot-phonon system","authors":"A. Matulionis, M. Ramonas, R. Katilius, S. Gantsevich","doi":"10.1109/ICNF.2011.5994298","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994298","url":null,"abstract":"A new type of correlation caused by fluctuations is resolved in coupled nonequilibrium (hot) electron-phonon system described by Boltzmann and Planck statistics. The kinetic equation for equal-time electron-phonon correlation function is obtained from the first principles by diagram technique. The correlation is demonstrated through Monte Carlo simulation of hot-electron-hot-phonon interaction in GaN subjected to a strong electric field. Hot-phonon lifetime can be obtained from hot-electron fluctuations.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124573173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Noise bias correction in accumulated modulus NMR signal recovery","authors":"G. Martini, G. Ferrante","doi":"10.1109/ICNF.2011.5994361","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994361","url":null,"abstract":"We discuss Nuclear Magnetic Resonance (NMR) signal detection in unstable magnetic field B and low Signal-to-Noise Ratio (SNR) condition. To improve SNR many acquisitions are accumulated and, because of B instability, inphase and quadrature components (I&Q) cannot be accumulated since carrier frequency changes from one acquisition to another. Carrier frequency dependence is removed by modulus S calculation, allowing S accumulation. Resulting accumulated S has improved SNR by a factor √k, but suffers from a noise error, sometimes called “noise bias”, arising from Rice statistics of S. We propose a technique to compensate such an error from knowledge of the original SNR of each acquisition of I&Q components. Usually SNR is estimated from acquisition with zero NMR signal, by switching off RF generator or, in NMR Imaging (MRI), from background pixels. Our technique is new since we estimate original SNR without switching off the signal to measure noise alone, but by calculation of modulus variance from accumulated S and S2. We describe the compensation technique, showing both simulated results and real world results confirming goodness of our approach.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129873530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of the underlap length on the RF noise performance of a Schottky Barrier MOSFET","authors":"E. Pascual, R. Rengel, M. J. Martín","doi":"10.1109/ICNF.2011.5994310","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994310","url":null,"abstract":"This paper is focused on the analysis of the high-frequency dynamic and noise performance and the static characteristics of n-type Schottky barrier (SB) MOSFETs on SOI substrate. A 2D Ensemble Monte Carlo (EMC) simulator including tunnelling transport at the Schottky interfaces has been used. Quantum transmission coefficients and treatment of image charge effects on the Schottky barrier have been carefully considered. The influence of the underlap length on the main figures of merit is described, thus showing the importance of this architecture parameter for the optimization of these devices.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128742443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Noise probe explores the glassiness of Ferromagnetic Insulating (FMI) state in manganites","authors":"S. Samanta, A. Raychaudhuri","doi":"10.1109/ICNF.2011.5994371","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994371","url":null,"abstract":"The ferromagnetic insulating (FMI) state of low hole doped manganites forms a disordered electronic system showing Efros-Shklovskii variable range hopping (ESVRH) type hoping at low temperature with evidence of a soft Coulomb gap of ΔCG. The temperature dependent noise identified a freezing temperature where the freezing process is kinetically governed with the time scale determined by an activation energy similar to ΔCG. The activation barrier determined from noise matches closely with ΔCG obtained from transport measurement. At low temperatures the fluctuation develops a non-Gaussian component. Using higher order statistics of fluctuations we experimentally address the evidence of slowly driven kinetics and correlated motion of charge carriers in FMI states.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130158816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gene expression noise in embryonic spatial patterning: Reliable formation of the head-to-tail axis in the fruit fly","authors":"D. Holloway, A. Spirov","doi":"10.1109/ICNF.2011.5994379","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994379","url":null,"abstract":"Fruit flies serve as a model for understanding the genetic regulation involved in specifying the complex body plans of higher animals. The head-to-tail (anterior-posterior) axis of the fly (Drosophila) is established in the first hours of development. Maternally supplied factors form concentration gradients which direct embryonic (zygotic) genes where to be activated to express proteins. These protein patterns specify the positions and cell types of the body's tissues. Recent research has shown, comparing between embryos, that the zygotic gene products are much more precisely positioned than the maternal gradients, indicating an embryonic error reduction mechanism. Within embryos, there is the additional aspect that DNA and mRNA operate at very low copy number, and the associated high relative noise has the potential to strongly affect protein expression patterns. In recent work, we have focused on the noise aspects of positional specification within individual embryos. We simulate activation of hunchback (hb), a primary target of the maternal Bicoid (Bcd) protein gradient, which forms an expression pattern dividing the embryo into anterior and posterior halves. We use a master equation approach to simulate the stochastic dynamics of hb regulation, using the known details of the hb promoter, the region of DNA responsible for transcribing hb mRNA. This includes the binding/unbinding of Bcd molecules at the promoter, hb transcription, subsequent translation to Hb protein, binding/unbinding of Hb at the promoter (self-regulation), and diffusion of the Bcd and Hb proteins. Model parameters were set by deterministically matching large scale pattern features for a series of experimental expression patterns: wild-type (WT) embryos; hb mutants lacking self-regulation; and constructs in which portions of the hb promoter were used to express a reporter gene (lacZ). The model was then solved stochastically to predict the noise output in these different experiments. In subsequent noise measurements we experimentally corroborated a number of the predictions. These include that mRNA is noisier than protein, and that Hb self-regulation reduces noise. Results indicate that WT (self-regulatory) Hb output noise is predominantly dependent on the transcription and translation dynamics of its own expression, and is uncorrelated with Bcd fluctuations. This contradicts prior work, which had assumed a complete dependence of Hb fluctuations on Bcd fluctuations. In the constructs and mutant, which lack self-regulation, we find that increasing the number and strength of Bcd binding sites (there are 6 in the core hb promoter) provides a rudimentary level of noise reduction. The model is robust to the various Bcd binding site numbers seen across different fly species. New directions in the project include incorporating a known inhibitor of hb, Krüppel, into the model to study its effect on the noise dynamics. Our study has identified particular ways in which hb output noise ","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128025973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impedance meter based on cross-correlation noise measurements","authors":"G. Scandurra, C. Ciofi","doi":"10.1109/ICNF.2011.5994349","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994349","url":null,"abstract":"In this paper we demonstrate how it is possible to exploit cross-correlation techniques in order to estimate a DUT impedance or admittance by means of noise measurements. The potential advantages of such an approach over conventional RLC meters are the absence of any external excitation source and that the entire impedance vs frequency plot can be obtained in almost real time with the measurement accuracy improving with measurement time. A prototype of such a cross-correlation based impedance meter has been realized and tested. The results of the performed experiments demonstrate the effectiveness of the proposed approach.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128136142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advanced modeling of oxide defects for random telegraph noise","authors":"W. Goes, F. Schanovsky, T. Grasser, H. Reisinger, B. Kaczer","doi":"10.1109/ICNF.2011.5994301","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994301","url":null,"abstract":"The results from a recently developed measurement technique, called time-dependent defect spectroscopy (TDDS), have shed new light on reliability issues, such as random telegraph noise (RTN) and the negative bias instability (NBTI). It has been found that established models fail to explain these findings. A refined charge trapping model is suggested by assuming additional metastable defect configurations. Thereby, we can give an explanation for the new TDDS findings while remaining consistent with results obtained from conventional RTN analysis.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133469001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}