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2011 21st International Conference on Noise and Fluctuations最新文献

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The limit distributions of growth rate fluctuation of complex systems: An application to business firms 复杂系统增长率波动的极限分布:在企业中的应用
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994382
H. Takayasu, Hayafumi Watanabe, M. Takayasu
{"title":"The limit distributions of growth rate fluctuation of complex systems: An application to business firms","authors":"H. Takayasu, Hayafumi Watanabe, M. Takayasu","doi":"10.1109/ICNF.2011.5994382","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994382","url":null,"abstract":"We consider statistical properties of aggregated systems consisting of randomly growing subunits which are governed by random multiplicative growth. The system exhibits typical features of complex systems such as power law system size distributions, fat-tailed growth rate distributions and nontrivial slow shrink of variance of growth rates as a function of the number of subunits. There are extraordinary cases in which variances of growth rates remain finite even in the limit of infinite numbers of sum of independent subunits having identical statistics. This result can be viewed as a generalization of the central limit theorem to the case of growth rates. As an example of real-world phenomena we analyze the business firm data of about 1 million Japanese firms and show that all features are consistent with our theory.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133526382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low frequency noise and ions diffusion in the CdTe bulk single crystals CdTe块体单晶中的低频噪声和离子扩散
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994387
H. Elhadidy, J. Sikula, O. Šik, L. Grmela, J. Zajacek, J. Franc, P. Moravec
{"title":"Low frequency noise and ions diffusion in the CdTe bulk single crystals","authors":"H. Elhadidy, J. Sikula, O. Šik, L. Grmela, J. Zajacek, J. Franc, P. Moravec","doi":"10.1109/ICNF.2011.5994387","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994387","url":null,"abstract":"The effect of ions diffusion on time dependence of noise and polarization phenomena of CdTe bulk single crystals has been carried out. We evaluated the instability of the reverse current of the Schottky contact at the P-type CdTe and the Au interface by a model which considers the effects of deep acceptors. The results shows small detrapping time compared to the experimental measurements. We suggested the diffusion of ions in depletion region at the metal - semiconductor interface causes an additional reduction of the barrier and could be considered as another responsible mechanism for the polarization effect. The CdTe samples showed noise source with dominant 1/ ƒn noise at low frequency, while the parameter n increases with repeating the measurements, indicating that another noise source has to be taken in account. The barrier fluctuating due to the ion diffusion in the depletion region can to be the another noise source,","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115424352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sources of 1/f noise in Si delta-doped Schottky diodes 掺硅三角肖特基二极管中1/f噪声的来源
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994273
A. V. Klyuev, E. Shmelev, A. V. Yakimov
{"title":"Sources of 1/f noise in Si delta-doped Schottky diodes","authors":"A. V. Klyuev, E. Shmelev, A. V. Yakimov","doi":"10.1109/ICNF.2011.5994273","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994273","url":null,"abstract":"The model of Schottky diode with δ-doping is suggested. This one is aimed for the determination of technological areas of the diode, which are responsible for the 1/f noise. Series resistance Rb of base and contacts, and the possible leakage Ileak are taken into account. Parameters of the diode are defined from the analysis of the current-voltage characteristic. For an explanation of experimental data the model of fluctuations in the charge of non-compensated donors in δ-layer of Schottky junction (ΔNs - model) and model of 1/f noise in leakage current are suggested. The analysis of the 1/f noise spectrum allows assuming that, in investigated diodes, on 106 atoms of main impurity there are 1–10 atoms of extraneous impurity the ionization energy of which may stochastically be modulated.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123341628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low-frequency noise in GaN diodes 氮化镓二极管中的低频噪声
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994325
K. Leung, W. Fong, C. Surya
{"title":"Low-frequency noise in GaN diodes","authors":"K. Leung, W. Fong, C. Surya","doi":"10.1109/ICNF.2011.5994325","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994325","url":null,"abstract":"In this paper we will investigate the origin of low-frequency excess noise in GaN-based LEDs. We will present experimental results on the impact of material growth processes on the properties of the low-frequency noise. Based on the results we will present a model on the underlying process for low-frequency excess noise in GaN-based LED structures and their relationship with the degradation of the device due to hot-electron stressing. We also demonstrate the use of low-frequency noise measurement as a characterization tool for the optimization of the growth parameters for the multiple quantum wells.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122939341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Noise in quartz crystal microbalance 石英晶体微天平中的噪声
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994336
P. Sedlák, J. Sikula, J. Majzner, M. Vrňata, F. Vysloužil, P. Fitl, Dušan Kopecký, P. Handel
{"title":"Noise in quartz crystal microbalance","authors":"P. Sedlák, J. Sikula, J. Majzner, M. Vrňata, F. Vysloužil, P. Fitl, Dušan Kopecký, P. Handel","doi":"10.1109/ICNF.2011.5994336","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994336","url":null,"abstract":"There are several mechanisms that are related to fluctuation phenomena in QCM. The aim of our research is oriented to study the sensitivity and influence of different kind of noises on sensor resolution. Our experiments are provided on sensor with sorption layer of polypyrrole which is suitable for detection of water vapor. Based on these experiments, we suppose that 1/f noise caused by quartz internal friction and adoption-desorption (generation-recombination) noise from analyzed gas create the main components of measured noise spectral density. The value of the adoption-desorption noise depends on the physical and chemical parameters of analyzed gas and it is proportional to gas density. Adsorption-desorption kinetics is described by Kolmogorov equation and compared with Wolkenstein and Langmuir equations.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121481506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
SiGe HBT-based active cold load: Design, characterization and stability measurements 基于SiGe hbt的主动冷负荷:设计、表征和稳定性测量
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994335
E. Leynia de la Jarrige, L. Escotte, E. Gonneau, J. Goutoule
{"title":"SiGe HBT-based active cold load: Design, characterization and stability measurements","authors":"E. Leynia de la Jarrige, L. Escotte, E. Gonneau, J. Goutoule","doi":"10.1109/ICNF.2011.5994335","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994335","url":null,"abstract":"We report experimental results concerning the noise performance and the stability of an active cold load (ACL) realized with an SiGe heterojunction bipolar transistor at microwave frequency (1.4 GHz). The ACL exhibits return loss higher than 35 dB and a noise temperature less than 66 K. Stability measurements performed over 4 months with a dedicated noise injection radiometer indicates that this active load is very stable.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125275058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Noise characteristics of dual-gate AlGaAs/InGaAs pHEMTs 双栅AlGaAs/InGaAs pHEMTs的噪声特性
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994303
Chih-Chan Hu, Y. Hsin, D. Lin, Chien-Chang Huang, Cheng-Kuo Lin, Yu-Chi Wang
{"title":"Noise characteristics of dual-gate AlGaAs/InGaAs pHEMTs","authors":"Chih-Chan Hu, Y. Hsin, D. Lin, Chien-Chang Huang, Cheng-Kuo Lin, Yu-Chi Wang","doi":"10.1109/ICNF.2011.5994303","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994303","url":null,"abstract":"In this study, we compare the noise characteristics of dual-gate AlGaAs/InGaAs pHEMTs in the frequency range of 1 to 18 GHz. The studied devices including dual-gate enhancement-/enhancement-mode (E/E-mode) and enhancement-/depletion-mode (E/D-mode) pHEMTs were fabricated on the same wafer by the different gate metallization. The minimum noise figure (NFmin) and associated gain (GA) are discussed with power and linearity performance at the same bias conditions. The dual-gate E/E- and E/D-mode devices have demonstrated low noise and high gain performance, and are equivalent to the cascode configuration for compact size as compared to a cascode low noise amplifier.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130098342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling the inverse cubic distributions by nonlinear stochastic differential equations 用非线性随机微分方程模拟逆三次分布
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994380
B. Kaulakys, M. Alaburda
{"title":"Modeling the inverse cubic distributions by nonlinear stochastic differential equations","authors":"B. Kaulakys, M. Alaburda","doi":"10.1109/ICNF.2011.5994380","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994380","url":null,"abstract":"One of stylized facts emerging from statistical analysis of financial markets is the inverse cubic law for the cumulative distribution of a number of events of trades and of the logarithmic price change. A simple model, based on the point process model of 1/f noise, generating the long-range processes with the inverse cubic cumulative distribution is proposed and analyzed. Main assumptions of the model are proportional to the process intensity, 1/τ(t), stochasticity of large interevent time τ(t) and the Brownian motion of small interevent time.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"196 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129324209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Unidirectional rotation driven by random fluctuations 由随机波动驱动的单向旋转
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994359
Cheng-Hung Chang, T. Tsong
{"title":"Unidirectional rotation driven by random fluctuations","authors":"Cheng-Hung Chang, T. Tsong","doi":"10.1109/ICNF.2011.5994359","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994359","url":null,"abstract":"Ratchet effect might be responsible for the unidirectional movement of a couple of systems. The theoretical study of ratchet mechanism usually focuses on the particle or state properties on a prescribed ratchet potential. In contrast, this work starts with a real system and shows how one can manipulate the system setup to have a ratchet potential for the system state. The model consists of a rotor surrounded by several drivers on a 2D plane. Both the rotor and drivers are furnished with electric dipoles, through which they can interact with each other. During the rotational fluctuations of the driver dipoles between two states, the rotor may rotate unidirectionally, independent of whether the driver fluctuations are periodic or completely random. If the driver fluctuations come from the conformational change of certain protein subunits consuming ATP, the rotor behavior would be similar to the rotation of the central γ subunit of F0F1-ATPase in mitochondria. We compare the rotational properties of our model with that of the flashing ratchet and F0F1-ATPase. This model provides a feasible way for harvesting non-equilibrium energy from ambient noise, which could be used to design microscopic artificial machines.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129283142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The low frequency noise behaviour of SiC MESFETs SiC mesfet的低频噪声特性
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994427
A. Konczakowska, J. Cichosz, D. Dokupil, Paweł Flisikowski, A. Szewczyk, B. Stawarz-Graczyk
{"title":"The low frequency noise behaviour of SiC MESFETs","authors":"A. Konczakowska, J. Cichosz, D. Dokupil, Paweł Flisikowski, A. Szewczyk, B. Stawarz-Graczyk","doi":"10.1109/ICNF.2011.5994427","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994427","url":null,"abstract":"In the paper results of low frequency noise measurements of SiC MESFET transistors were presented. The investigations were carried out on MESFET type CRF24010 (CREE). The low frequency noise of drain current and of gate current was measured in two-channel system, separately but in the same time. The spectra of a drain current noise and of a gate current noise were evaluated, also a coefficient of coherence between these noise sources. The noise of gate current was measured in the one-channel system. The noise model of MESFET for CRF24010 transistors for low frequency was elaborated.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129417188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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