Noise characteristics of dual-gate AlGaAs/InGaAs pHEMTs

Abstract

In this study, we compare the noise characteristics of dual-gate AlGaAs/InGaAs pHEMTs in the frequency range of 1 to 18 GHz. The studied devices including dual-gate enhancement-/enhancement-mode (E/E-mode) and enhancement-/depletion-mode (E/D-mode) pHEMTs were fabricated on the same wafer by the different gate metallization. The minimum noise figure (NFmin) and associated gain (GA) are discussed with power and linearity performance at the same bias conditions. The dual-gate E/E- and E/D-mode devices have demonstrated low noise and high gain performance, and are equivalent to the cascode configuration for compact size as compared to a cascode low noise amplifier.