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2011 21st International Conference on Noise and Fluctuations最新文献

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Quantum paradoxes in electronic counting statistics 电子计数统计中的量子悖论
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994337
A. Bednorz, K. Franke, W. Belzig
{"title":"Quantum paradoxes in electronic counting statistics","authors":"A. Bednorz, K. Franke, W. Belzig","doi":"10.1109/ICNF.2011.5994337","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994337","url":null,"abstract":"The impossibility of measuring non-commuting quantum mechanical observables is one of the most fascinating consequences of the quantum mechanical postulates. Hence, to date the investigation of quantum measurement and projection is a fundamentally interesting topic. We propose to test the concept of weak measurement of non-commuting observables in mesoscopic transport experiments, using a quasiprobabilistic description. We derive an inequality for current correlators, which is satisfied by every classical probability but violated by high-frequency fourth-order cumulants in the quantum regime for experimentally feasible parameters. We further address the creation and detection of entanglement in solid-state electronics, which is of fundamental importance for quantum information processing. We propose a general test of entanglement based on the violation of a classically satisfied inequality for continuous variables by 4th or higher order quantum correlation functions. Our scheme provides a way to prove the existence of entanglement in a mesoscopic transport setup by measuring higher order cumulants without requiring the additional assumption of single charge detection.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125090376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison of dynamic fluctuation in drain current with static variability using N-MOSFETs with poly-Si/SiO2 gate stack structures 用n - mosfet与多si /SiO2栅极堆叠结构比较漏极电流的动态波动与静态变化
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994332
K. Ohmori, R. Hettiarachchi, W. Feng, T. Matsuki, K. Yamada
{"title":"Comparison of dynamic fluctuation in drain current with static variability using N-MOSFETs with poly-Si/SiO2 gate stack structures","authors":"K. Ohmori, R. Hettiarachchi, W. Feng, T. Matsuki, K. Yamada","doi":"10.1109/ICNF.2011.5994332","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994332","url":null,"abstract":"We have revealed that the dynamic fluctuation in time, i.e., noise, of drain current (Id) is closely related to the static variability. The current conduction mechanism such as diffusion and drift transports is a key to consistently understand the magnitude of not only the noise from a single transistor but also the static variability obtained from a number of transistors. The magnitude of fluctuation in the diffusion regime is larger than that in the drift regime, where the large number of carriers reduces the fluctuation.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"44 7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122424327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Assessment of temperature dependence of the low frequency noise in unstrained and strained FinFETs 非应变和应变finfet中低频噪声的温度依赖性评估
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994281
R. Talmat, H. Achour, B. Crețu, J. Routoure, A. Benfdila, R. Carin, N. Collaert, A. Mercha, E. Simoen, C. Claeys
{"title":"Assessment of temperature dependence of the low frequency noise in unstrained and strained FinFETs","authors":"R. Talmat, H. Achour, B. Crețu, J. Routoure, A. Benfdila, R. Carin, N. Collaert, A. Mercha, E. Simoen, C. Claeys","doi":"10.1109/ICNF.2011.5994281","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994281","url":null,"abstract":"This paper aims at the studying the low frequency noise from 100 K up to room temperature in n- and p-channel triple-gate FinFET transistors with 25 nm fin-width, 65 nm fin-height, a high-k dielectric / metal gate stack, strained and unstrained substrates. These investigations allow evaluating the quality of the gate oxide interface, to identify defects in the silicon film and to make a correlation between the observed defects and some technological steps.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122509115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Solutions of nonlinear stochastic differential equations with 1/ƒ noise power spectrum 具有1/ f噪声功率谱的非线性随机微分方程的解
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994297
B. Kaulakys, J. Ruseckas
{"title":"Solutions of nonlinear stochastic differential equations with 1/ƒ noise power spectrum","authors":"B. Kaulakys, J. Ruseckas","doi":"10.1109/ICNF.2011.5994297","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994297","url":null,"abstract":"The special nonlinear stochastic differential equations generating power-law distributed signals and 1/ƒ noise are considered. The models involve the generalized Constant Elasticity of Variance (CEV) process, the Bessel process, the Squared Bessel process, and the Cox-Ingersoll-Ross (CIR) process, which are applied for modeling the financial markets, as well. In the paper, 1/ƒβ behavior of the power spectral density is derived directly from the nonlinear stochastic differential equations and the exact solutions for the particular CEV process are presented.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121116793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1/f noise in strained SiGe on Insulator MOSFETs 绝缘体mosfet上应变SiGe的1/f噪声
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994338
M. Valenza, J. El Husseini, J. Gyani, F. Martinez, C. Le Royer, J. Damlencourt
{"title":"1/f noise in strained SiGe on Insulator MOSFETs","authors":"M. Valenza, J. El Husseini, J. Gyani, F. Martinez, C. Le Royer, J. Damlencourt","doi":"10.1109/ICNF.2011.5994338","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994338","url":null,"abstract":"This paper presents low-frequency noise in Si<inf>0.75</inf>Ge<inf>0.25</inf> and Si<inf>0.65</inf>Ge<inf>0.35</inf> p- and n-channel strained Germanium on Insulator (SGOI) MOSFETs with 15nm thick substrates and with TiN/HfO<inf>2</inf>/SiO<inf>2</inf> gate stacks, obtained using the enrichment technique. In strong inversion, front and back interface current noise in PMOSFET devices is described using the ΔN model, whereas NMOSFET noise is described using the ΔN-Δµ model, with a ten-fold increase in noise in some cases. In weak inversion, the noise behavior deviates from these standard models and may be described by noise coupling between the two interfaces. For both types of device, the extracted densities are approximately the same, with no significant impact from the variation of the Ge content.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127580905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Response of electrohydrodynamic convection to external noise 电流体动力对流对外部噪声的响应
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994316
Jong-Hoon Huh, Xiangwen Cui
{"title":"Response of electrohydrodynamic convection to external noise","authors":"Jong-Hoon Huh, Xiangwen Cui","doi":"10.1109/ICNF.2011.5994316","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994316","url":null,"abstract":"We report noise-induced threshold shifts in ac-driven electrohydrodynamic convection (EHC) in nematic liquid crystals. By changing the intensity V<inf>N</inf> and cutoff frequency ƒ<inf>c</inf> of noise, we investigate EHC-threshold shifts. There exists the characteristic cutoff frequency ƒ<inf>c</inf>* for the influence of noise on EHC. For cutoff frequencies ƒ<inf>c</inf> > ƒ<inf>c</inf>*, noise contributes to stabilizing the onset of EHC (i.e., it shifts the onset threshold upward), whereas for ƒ<inf>c</inf> &#60; ƒ<inf>c</inf>*, noise contributes to destabilizing the onset of EHC (i.e., it shifts the onset threshold downward). For ƒ<inf>c</inf> = ƒ<inf>c</inf>*, noise makes no contribution to the threshold shift (i.e., it is neutral with respect to the onset of EHC). However, the pattern structure of EHC is changed by V<inf>N</inf>, independent of ƒ<inf>c</inf>.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"591 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131552304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultrasensitive portable optoelectronic system dedicated to detection of bioluminescence 用于检测生物发光的超灵敏便携式光电系统
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994328
J. Kayaian, B. Orsal
{"title":"Ultrasensitive portable optoelectronic system dedicated to detection of bioluminescence","authors":"J. Kayaian, B. Orsal","doi":"10.1109/ICNF.2011.5994328","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994328","url":null,"abstract":"This work aims to show that we can design a portable luminometer field capable of accurately detecting the femtomole of adenosine triphosphate (ATP) by using bioluminescence and optoelectronic noise measurement in order to reduce noise levels. We present our results with a demonstrator on the ATP detection which is an indicator of the presence of living cells in a medium and therefore a possible microbiological contamination. Experiments are made using a luminometer whose the sensor is an optoelectronic device which may be a photodiode or a photomultiplier. Multiplication noise and Noise Equivalent Power (NEP) are evaluated in order to compare the prototype luminometer performances with those of laboratory equipment used to evaluate the detectable minimum optical power of our portable prototype luminometers. All data allow to evaluate Equivalent Noise Input Photon used in the evaluation of the optical power detected due to the luminescence and estimate ATP concentration lower than the femtomole.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"6 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128614977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental test of Fluctuation Theorem in a quantum coherent conductor 量子相干导体涨落定理的实验检验
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994319
S. Nakamura, Y. Yamauchi, M. Hashisaka, K. Chida, K. Kobayashi, T. Ono, R. Leturcq, K. Ensslin, Keiji Saito, Y. Utsumi, A. Gossard
{"title":"Experimental test of Fluctuation Theorem in a quantum coherent conductor","authors":"S. Nakamura, Y. Yamauchi, M. Hashisaka, K. Chida, K. Kobayashi, T. Ono, R. Leturcq, K. Ensslin, Keiji Saito, Y. Utsumi, A. Gossard","doi":"10.1109/ICNF.2011.5994319","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994319","url":null,"abstract":"Mesoscopic systems provide us a unique experimental stage to address nonequilibrium quantum statistical physics. Recently we demonstrated that, by measuring the current and the current noise in a mesoscopic conductor, Fluctuation Theorem (FT) can be tested. Here, our experiment as well as theoretical background is discussed. The result qualitatively validates the predictions derived from FT as the first experimental evidence of FT in the nonequilibrium quantum regime.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133931778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low frequency noise in phase change materials 相变材料中的低频噪声
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994373
R. Jeyasingh, J. Chroboczek, G. Ghibaudo, M. Mouis, H. Wong
{"title":"Low frequency noise in phase change materials","authors":"R. Jeyasingh, J. Chroboczek, G. Ghibaudo, M. Mouis, H. Wong","doi":"10.1109/ICNF.2011.5994373","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994373","url":null,"abstract":"Low frequency noise (LFN) is particularly well-adapted for studies of phase change memory cells as it is generated in the cells' amorphous volume alone. The latter is known to have a very high concentration of localized traps and the charge transport proceeds via hopping in a random network of traps. LFN is proposed to be generated by variation in the configuration of the traps' structure. The spectral power density of LFN (i) is of the 1/f type, (ii) varies as the cell current square, (iii) is inversely proportional to the cell thickness. Some results of the LFN dependence on the cells' resetting conditions and structure are also discussed.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116976467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Low-frequency noise in FinFETs with PtSi Schottky-barrier source/drain contacts 具有PtSi肖特基垒源/漏极触点的finfet的低频噪声
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994282
B. Malm, M. Olyaei, M. Ostling
{"title":"Low-frequency noise in FinFETs with PtSi Schottky-barrier source/drain contacts","authors":"B. Malm, M. Olyaei, M. Ostling","doi":"10.1109/ICNF.2011.5994282","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994282","url":null,"abstract":"Schottky-barrier source/drain (SB-S/D) is a promising solution for low-resistive contact formation in fully depleted SOI ultra-thin body (UTB) FETs, or FinFETs. In this study the low-frequency noise of FinFETs and UTB-FETs, with platinum-silicide based source/drain contacts with low barrier height was characterized. The barrier height was tuned by means of segregation of implanted As or B. In the linear region of operation the noise power spectral density of devices with different barrier heights was not significantly affected for a given drain current. This suggests that channel noise dominates the behavior and that the low effective Schottky barrier height in dopant segregated devices does not introduce additional noise.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"54 29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117154505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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