Comparison of dynamic fluctuation in drain current with static variability using N-MOSFETs with poly-Si/SiO2 gate stack structures

Abstract

We have revealed that the dynamic fluctuation in time, i.e., noise, of drain current (Id) is closely related to the static variability. The current conduction mechanism such as diffusion and drift transports is a key to consistently understand the magnitude of not only the noise from a single transistor but also the static variability obtained from a number of transistors. The magnitude of fluctuation in the diffusion regime is larger than that in the drift regime, where the large number of carriers reduces the fluctuation.