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2011 21st International Conference on Noise and Fluctuations最新文献

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1/ƒ noise in ZnO films ZnO薄膜中的1/ f噪声
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994393
L. Yang, G. Leroy, J. Gest, L. Vandamme
{"title":"1/ƒ noise in ZnO films","authors":"L. Yang, G. Leroy, J. Gest, L. Vandamme","doi":"10.1109/ICNF.2011.5994393","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994393","url":null,"abstract":"We have investigated the low-frequency noise of ZnO film deposited by dc sputtering technique on glass substrate. We characterized the noise below 100kHz and obtained classical 1/ƒ spectra. We attempted to verify the validity of Hooge's empirical relation and to test its usefulness as a diagnostic tool. The 1/ƒ noise normalized for bias, frequency and unit area, Cus is proportional with the sheet resistance Rsh. We found that the noise results depend strongly on illumination.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117244636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Trap density in Ge-on-Si pMOSFETs with Si intermediate layers 具有Si中间层的Ge-on-Si pmosfet的陷阱密度
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994331
K. Fobelets, S. Rumyantsev, M. Shur, B. Vincent, J. Mitard, B. de Jaeger, E. Simoen, T. Hoffmann
{"title":"Trap density in Ge-on-Si pMOSFETs with Si intermediate layers","authors":"K. Fobelets, S. Rumyantsev, M. Shur, B. Vincent, J. Mitard, B. de Jaeger, E. Simoen, T. Hoffmann","doi":"10.1109/ICNF.2011.5994331","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994331","url":null,"abstract":"The 1/f noise of three different Ge channel p-type MOSFETs, epitaxially grown on silicon substrates was measured between 1 and 100 Hz. The difference between the p-MOSFETs is the thickness of the interfacial Si layer between Ge channel and gate stack that is needed to passivate the Ge channel. The gate stack consists of SiO2/HfO2/TaN/TiN layers. Noise in all structures complies with the McWorther carrier number fluctuation model. The magnitude of the noise power spectral density of the drain current was found to increase with decreasing Si interfacial layer thickness. The extracted trap densities are between 1018 and 1019 cm−1 eV−1. These values are currently at the lower end of the range of other MOSFETs with high-k dielectric gate stacks.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114295387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low Frequency Noise as a tool to study degradation processes in 4H-SiC p-n junctions 低频噪声作为研究4H-SiC p-n结降解过程的工具
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994272
S. Rumyantsev, M. Levinshtein, M. Shur, J. Palmour, A. Agarwal, M. Das
{"title":"Low Frequency Noise as a tool to study degradation processes in 4H-SiC p-n junctions","authors":"S. Rumyantsev, M. Levinshtein, M. Shur, J. Palmour, A. Agarwal, M. Das","doi":"10.1109/ICNF.2011.5994272","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994272","url":null,"abstract":"Studies of forward current stress on the low frequency noise in the 4H-SiC high voltage rectifier p+-n diodes revealed that (a) noise is a more sensitive indicator of degradation than IV characteristics, (b) noise could actually decrease with degradation, and (c) degradation mechanism might be linked to stacking faults.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125426543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Noise of a single electron emitter: Experiment 单电子发射器的噪声:实验
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994394
F. Parmentier, E. Bocquillon, A. Mahé, J. Berroir, D. Glattli, B. Plaçais, G. Fève, A. Cavanna, Y. Jin
{"title":"Noise of a single electron emitter: Experiment","authors":"F. Parmentier, E. Bocquillon, A. Mahé, J. Berroir, D. Glattli, B. Plaçais, G. Fève, A. Cavanna, Y. Jin","doi":"10.1109/ICNF.2011.5994394","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994394","url":null,"abstract":"We present here the experimental study of the short time correlations of the current fluctuations generated by a periodic single electron emitter. The electron emitter is a mesoscopic capacitor, a top gated quantum dot connected to a conductor via a tunable tunnel barrier. We observe a new fundamental noise for electrons which is associated with the quantum fluctuations of the electron emission time from one emission cycle to the other. This random jitter between the emission trigger and the single particle emission is related to the random nature of single particle tunneling and is intrinsic to any single particle emitter. When the emitter emits a single particle at each cycle with unit probability, the noise reduces to this fundamental jitter limit which demonstrates single particle emission.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125936646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Noise spectroscopy of traps in silicon nanowire field-effect transistors 硅纳米线场效应晶体管陷阱的噪声光谱
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994309
S. Pud, J. Li, M. Petrychuk, S. Feste, A. Offenhausser, S. Mantl, S. Vitusevich
{"title":"Noise spectroscopy of traps in silicon nanowire field-effect transistors","authors":"S. Pud, J. Li, M. Petrychuk, S. Feste, A. Offenhausser, S. Mantl, S. Vitusevich","doi":"10.1109/ICNF.2011.5994309","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994309","url":null,"abstract":"We investigated noise spectra of strained nanowire field-effect transistors with cross-section of 42×42nm2. Analysis of the flicker noise component behavior enabled us to evaluate the volume trap density at different locations of the nanowire cross-section. The measured value is not higher than that in conventional planar transistors. As the result of the Lorentzian noise component investigation we have estimated that the position of the single active trap in gate oxide dielectric is at a depth of 0.6 nm.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128189174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low frequency noise of CdTe single crystals under light illumination 光照下CdTe单晶的低频噪声
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994307
A. Andreev, L. Grmela, O. Šik, H. Elhadidy, J. Sikula
{"title":"Low frequency noise of CdTe single crystals under light illumination","authors":"A. Andreev, L. Grmela, O. Šik, H. Elhadidy, J. Sikula","doi":"10.1109/ICNF.2011.5994307","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994307","url":null,"abstract":"Noise spectroscopy of CdTe radiation detector has been carried out. When the sample is illuminated, 1/f noise is generated in the bulk as well as on the surface as a result of charge carrier interactions and also of radiation fluctuations. Conditions for the light absorption to take place on the surface only can be adjusted by properly selecting the wavelength. When the sample is illuminated by the light with the photon energy lower than the band gap energy noise is generated in sample volume and GR noise can be observed. For illumination by light with energy higher than the band gap energy light is observed on the surface and then we have measured 1/f noise only. In this case the corresponding sources are located on the surface","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123590240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hybrid 2D-3D plasmonic noise in a gated semiconductor slab 门控半导体板中二维-三维等离子体杂化噪声
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994286
H. Marinchio, C. Palermo, L. Varani, J. Millithaler, L. Reggiani, P. Shiktorov, E. Starikov, V. Gruzinskis
{"title":"Hybrid 2D-3D plasmonic noise in a gated semiconductor slab","authors":"H. Marinchio, C. Palermo, L. Varani, J. Millithaler, L. Reggiani, P. Shiktorov, E. Starikov, V. Gruzinskis","doi":"10.1109/ICNF.2011.5994286","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994286","url":null,"abstract":"We present a joint analytical and numerical study of plasmonic noise in gated semiconductor slabs of arbitrary thickness. Through the analysis of the high-frequency spectral density of voltage fluctuations we show that the positions of the frequency resonances depend on the topology of the slabs. A transition from a 2D to a 3D behavior is revealed when the channel length decreases or when the order of the modes grows. In particular, the resonance frequencies converge towards the value of the 3D plasma frequency which represents the maximum possible value for resonance frequencies.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126453769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Noise diagnostics of advanced composite materials for structural applications 结构用先进复合材料的噪声诊断
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994391
P. Koktavy, T. Trčka, B. Koktavý
{"title":"Noise diagnostics of advanced composite materials for structural applications","authors":"P. Koktavy, T. Trčka, B. Koktavý","doi":"10.1109/ICNF.2011.5994391","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994391","url":null,"abstract":"Our study is focused on noise diagnostics of an advanced composite material for structural applications called extren, which consists of a combination of a fibre glass reinforcement and a resin binder. Electromagnetic and acoustic emission signals appear during mechanical loading of the material under investigation. They carry information about micro-cracks generated in tested materials. We made long-time simultaneous multi-channel measurements of both signals for various loading conditions, carried out time development of noise spectrum, evaluated parameters of EME and AE events, studied their time development, correlations between them and made statistical analyses of signals and their parameters.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130561754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Noise of Ta2O5 and Nb2O5 thin insulating films in the temperature range 10 K to 400 K Ta2O5和Nb2O5薄膜在10 ~ 400 K温度范围内的噪声
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994376
V. Sedlakova, M. Chvatal, M. Kopecký, J. Sikula
{"title":"Noise of Ta2O5 and Nb2O5 thin insulating films in the temperature range 10 K to 400 K","authors":"V. Sedlakova, M. Chvatal, M. Kopecký, J. Sikula","doi":"10.1109/ICNF.2011.5994376","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994376","url":null,"abstract":"We have performed investigation of noise and transport mechanisms in insulating films of Ta2O5 and Nb2O5 from the point of view of their application as dielectric layers in capacitors, MOS devices, etc. These dielectric films show high relative permittivity, low leakage current density of the order of nA/cm2 in the electric field 1MV/cm, and high breakdown field of the order of 3–4 MV/cm. Analysis of I–V characteristics performed as a function of temperature allows the identification of dominant conduction mechanisms and corresponding noise sources. Ta2O5 films of the thickness about 28 nm and Nb2O5 thin films of the thickness about 150 nm were investigated. Tunneling current mechanism is dominant for the temperatures below 200 K. In this temperature range current noise spectral density is 1/f type. Poole-Frenkel and Schottky current transport mechanism is dominant for temperatures higher than 350 K. 1/f noise is pronounced in the frequency range bellow 20 Hz, while in the range 20 to 100 Hz GR noise is dominant for low current values. For the insulating layer thickness below 50 nm current noise spectral density is given by the superposition of at least two GR noise components with different time constants. This behavior is observed for the temperature higher than 200 K.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132047137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Time dependent statistical thermodynamic properties of disordered solids 无序固体随时间变化的统计热力学性质
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994381
M. Ochiai, T. Sawaguchi
{"title":"Time dependent statistical thermodynamic properties of disordered solids","authors":"M. Ochiai, T. Sawaguchi","doi":"10.1109/ICNF.2011.5994381","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994381","url":null,"abstract":"It is noted that glass is in non-equilibrium state on the way to the thermal equilibrium, that is, a kind of a slow relaxation process and depends on its whole thermal history. It is also known that, in the experimental way, so called the entropy of glass measured by cooling and heating shows respectively lower and upper bounds of the entropy defined by statistical thermodynamics. In this paper, we provide a new method how to generalize a relationship described by an inequality between calorimetric entropy and statistical one in a glass state, where a time dependent H function written by a non-equilibrium probability distribution plays a main role.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129742339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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