Noise spectroscopy of traps in silicon nanowire field-effect transistors

Abstract

We investigated noise spectra of strained nanowire field-effect transistors with cross-section of 42×42nm2. Analysis of the flicker noise component behavior enabled us to evaluate the volume trap density at different locations of the nanowire cross-section. The measured value is not higher than that in conventional planar transistors. As the result of the Lorentzian noise component investigation we have estimated that the position of the single active trap in gate oxide dielectric is at a depth of 0.6 nm.