Low Frequency Noise as a tool to study degradation processes in 4H-SiC p-n junctions

Abstract

Studies of forward current stress on the low frequency noise in the 4H-SiC high voltage rectifier p+-n diodes revealed that (a) noise is a more sensitive indicator of degradation than IV characteristics, (b) noise could actually decrease with degradation, and (c) degradation mechanism might be linked to stacking faults.