低频噪声作为研究4H-SiC p-n结降解过程的工具

2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI:10.1109/ICNF.2011.5994272

S. Rumyantsev, M. Levinshtein, M. Shur, J. Palmour, A. Agarwal, M. Das

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摘要

对4H-SiC高压整流p+ n二极管低频噪声的正向电流应力研究表明:(a)噪声是比IV特性更敏感的劣化指标，(b)噪声实际上可以随着劣化而降低，(c)劣化机制可能与堆积故障有关。

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Low Frequency Noise as a tool to study degradation processes in 4H-SiC p-n junctions

Studies of forward current stress on the low frequency noise in the 4H-SiC high voltage rectifier p+-n diodes revealed that (a) noise is a more sensitive indicator of degradation than IV characteristics, (b) noise could actually decrease with degradation, and (c) degradation mechanism might be linked to stacking faults.

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2011 21st International Conference on Noise and Fluctuations

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